This letter presents a four-way power combined $D$ -band power amplifier (PA) in 0.13- $\mu \text{m}$ SiGe technology. The conventional cascode topology is modified by adding an additional interstage network between the common-emitter (CE) and common-base (CB) devices. Further techniques, such as power combining and adaptive bias circuits, are implemented to boost the power generation and the efficiency of the amplifier. The realized PA exhibits a saturated output power of 19.6 dBm with a maximum power-added-efficiency (PAE) of 9.5% at 130 GHz, which is a leading-edge performance among the reported silicon (Si) $D$ -band PAs in similar technologies. The small-signal gain peaks at 16 dB and the PA has a 3-dB bandwidth of 18 GHz.

中文翻译：

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采用 0.13-μm SiGe 的四路组合 A 波段功率放大器

这封信提出了一个四路电源组合 $D$ - 0.13 频段功率放大器 (PA)- $\mu \text{m}$硅锗技术。通过在共发射极 (CE) 和共基极 (CB) 器件之间添加额外的级间网络来修改传统的级联拓扑。实施进一步的技术，例如功率组合和自适应偏置电路，以提高功率生成和放大器的效率。实现的 PA 的饱和输出功率为 19.6 dBm，在 130 GHz 时的最大功率附加效率 (PAE) 为 9.5%，在已报道的硅 (Si) 中处于领先地位 $D$ 类似技术的波段功率放大器。小信号增益峰值为 16 dB，PA 具有 18 GHz 的 3 dB 带宽。