Two-dimensional (2D) materials are promising for atomic-scale, ultralow-power, and highly tunable resonant nanoelectromechanical systems (NEMS) in sensing, communications, and computing. Toward these applications, a broad and controllable linear dynamic range (DR) is desirable for increasing the signal-to-noise ratio (SNR) and reliability. Here, we develop a comprehensive strain-enhanced DR model for 2D NEMS resonators, which is experimentally verified through the tuning of DRs in 2D molybdenum disulfide (MoS2) and molybdenum ditelluride (MoTe2) NEMS resonators using gate-induced strain. We find that the resonance frequency, quality factor, and nonlinear coefficient are all tuned by the gate voltage, which enhance the DR together. Through the guidance of the DR tuning model, we demonstrate DR enhancement by up to 26.9 dB (from 69.5 to 96.4 dB) in a 2D MoS2 NEMS resonator by properly tuning the gate voltage, leading to a theoretical mass resolution of 26 yg (1 yg = 10−24 g). To accurately extract the DR, we further differentiate the quality factors for thermomechanical resonances and for resonances at the largest linear amplitude. This gate-enhanced DR model is also verified using a MoTe2 resonator, with DR enhancement of 7 dB (91.2 to 98.2 dB). The results provide a promising pathway for accurately predicting and optimizing the DRs in NEMS resonators, toward enhanced sensitivity and SNR in mass sensing, radio frequency signal processing, memory, and computing applications.

中文翻译：

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二维 MoS2 和 MoTe2 纳米机械谐振器中的应变增强动态范围

二维 (2D) 材料有望用于传感、通信和计算领域的原子级、超低功耗和高度可调的谐振纳米机电系统 (NEMS)。对于这些应用，需要宽广且可控的线性动态范围 (DR)，以提高信噪比 (SNR) 和可靠性。在这里，我们开发了一个用于 2D NEMS 谐振器的综合应变增强 DR 模型，并通过使用栅极诱导应变调整 2D 二硫化钼 (MoS2) 和二碲化钼 (MoTe2) NEMS 谐振器中的 DR 进行了实验验证。我们发现谐振频率、品质因数和非线性系数都由栅极电压调节，从而共同增强了 DR。通过 DR 调谐模型的指导，我们通过正确调谐栅极电压，在 2D MoS2 NEMS 谐振器中展示了高达 26.9 dB（从 69.5 到 96.4 dB）的 DR 增强，从而实现 26 yg（1 yg）的理论质量分辨率= 10−24 g)。为了准确提取 DR，我们进一步区分热机械共振和最大线性振幅共振的品质因数。该栅极增强 DR 模型还使用 MoTe2 谐振器进行了验证，DR 增强了 7 dB（91.2 至 98.2 dB）。这些结果为准确预测和优化 NEMS 谐振器中的 DR 提供了一条有前途的途径，从而提高质量传感、射频信号处理、存储器和计算应用中的灵敏度和 SNR。