Flexible information memory is the key component of flexible electronic devices and the core of intelligent wearable devices. In this paper, Ge/Sb multilayer phase change films of various thickness ratios were prepared using polyether ether ketone as substrate, and their flexible phase change properties and device conversion characteristics were studied. After bending for 100000 times and bending experiments with different bending radius, the film can still realize the transition from amorphous to crystalline states, and the resistance fluctuation was small. Bending, stretching and pressing of the film resulted in grain refinement and increasing of crystalline resistance. The flexible electronic devices using Ge/Sb multilayer films were prepared. The phase change memory device can realize reversible conversion between SET and RESET states with different pulse widths in flat, bent states and after bending many times. All findings show that Ge/Sb multilayer films on PEEK substrate have broad application prospects in high-performance flexible memory in the future.

柔性信息存储器是柔性电子设备的关键部件，也是智能可穿戴设备的核心。本文以聚醚醚酮为基底制备了不同厚度比的Ge/Sb多层相变薄膜，并研究了其柔性相变性能和器件转换特性。经过10万次弯曲和不同弯曲半径的弯曲实验后，薄膜仍能实现非晶态到晶态的转变，且电阻波动较小。薄膜的弯曲、拉伸和压制导致晶粒细化和结晶电阻增加。制备了采用Ge/Sb多层薄膜的柔性电子器件。该相变存储器件可以在平坦态、弯曲态以及多次弯曲后实现不同脉冲宽度的SET和RESET状态之间的可逆转换。所有研究结果表明，PEEK基底上的Ge/Sb多层薄膜未来在高性能柔性存储器中具有广阔的应用前景。