Organic electrochemical transistors (OECTs) can be used to create biosensors, wearable devices and neuromorphic systems. However, restrictions in the micro- and nanopatterning of organic semiconductors, as well as topological irregularities, often limit their use in monolithically integrated circuits. Here we show that the micropatterning of organic semiconductors by electron-beam exposure can be used to create high-density (up to around 7.2 million OECTs per cm²) and mechanically flexible vertical OECT arrays and circuits. The energetic electrons convert the semiconductor exposed area to an electronic insulator while retaining ionic conductivity and topological continuity with the redox-active unexposed areas essential for monolithic integration. The resulting p- and n-type vertical OECT active-matrix arrays exhibit transconductances of 0.08–1.7 S, transient times of less than 100 μs and stable switching properties of more than 100,000 cycles. We also fabricate vertically stacked complementary logic circuits, including NOT, NAND and NOR gates.

有机电化学晶体管（OECT）可用于创建生物传感器、可穿戴设备和神经形态系统。然而，有机半导体的微米和纳米图案的限制以及拓扑不规则性通常限制了它们在单片集成电路中的使用。在这里，我们展示了通过电子束曝光对有机半导体进行微图案化，可用于创建高密度（高达每 cm ²约 720 万个 OECT ）和机械柔性垂直 OECT 阵列和电路。高能电子将半导体暴露区域转化为电子绝缘体，同时保留离子导电性和与单片集成所必需的氧化还原活性未暴露区域的拓扑连续性。由此产生的 p 型和 n 型垂直 OECT 有源矩阵阵列具有 0.08-1.7 S 的跨导、小于 100 μs 的瞬态时间以及超过 100,000 个周期的稳定开关特性。我们还制造垂直堆叠互补逻辑电路，包括“非”、“与非”和“或非”门。