We demonstrate a III-V-on-silicon-nitride mode-locked laser through the heterogeneous integration of a semiconductor optical amplifier on a passive silicon-nitride cavity using the technique of micro-transfer printing. In the initial phase of our study, we focus on optimizing the lasing wavelength to be centered at 1550 nm. This optimization is achieved by conducting experiments with 27 mode-locked lasers, each incorporating optical amplifiers featuring distinct multiple-quantum-well photoluminescence values. Subsequently we present a comprehensive study investigating the behavior of the mode-locking regime when the electrical driving parameters are varied. Specifically, we explore the impact of the gain voltage and saturable absorber current on the locking stability of a tunable mode-locked laser. By manipulating these parameters, we demonstrate the precise control of the optical spectrum across a wide range of wavelengths spanning from 1530 to 1580 nm. Furthermore, we implement an optimization approach based on a Monte Carlo analysis aimed at enhancing the mode overlap within the gain region. This adjustment enables the achievement of a laser emitting a 23-nm-wide spectrum while maintaining a defined 10 dB bandwidth for a pulse repetition rate of 3 GHz.

中文翻译：

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发射宽光谱的异质可调谐 III-V 族氮化硅锁模激光器

我们使用微转移印刷技术，通过在无源氮化硅腔上异构集成半导体光放大器，展示了氮化硅上的 III-V 锁模激光器。在我们研究的初始阶段，我们专注于优化以 1550 nm 为中心的激光波长。这种优化是通过使用 27 个锁模激光器进行实验来实现的，每个锁模激光器都包含具有不同多量子阱光致发光值的光学放大器。随后，我们提出了一项全面的研究，调查电力驱动参数变化时锁模机制的行为。具体来说，我们探讨了增益电压和可饱和吸收器电流对可调谐锁模激光器的锁定稳定性的影响。通过操纵这些参数，我们展示了对 1530 至 1580 nm 宽范围波长的光谱的精确控制。此外，我们实施了一种基于蒙特卡罗分析的优化方法，旨在增强增益区域内的模式重叠。这种调整使得激光器能够发射 23 nm 宽的光谱，同时保持 3 GHz 脉冲重复率的定义 10 dB 带宽。