Semiconductor quantum dots operated dynamically are the basis of many quantum technologies such as quantum sensors and computers. Hence, modelling their electrical properties at microwave frequencies becomes essential to simulate their performance in larger electronic circuits. Here, we develop a self-consistent quantum master equation formalism to obtain the admittance of a quantum dot tunnel-coupled to a charge reservoir under the effect of a coherent photon bath. We find a general expression for the admittance that captures the well-known semiclassical (thermal) limit, along with the transition to lifetime and power broadening regimes due to the increased coupling to the reservoir and amplitude of the photonic drive, respectively. Furthermore, we describe two new photon-mediated regimes: Floquet broadening, determined by the dressing of the QD states, and broadening determined by photon loss in the system. Our results provide a method to simulate the high-frequency behaviour of QDs in a wide range of limits, describe past experiments, and propose novel explorations of QD-photon interactions.

中文翻译：

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半导体量子点在高频下的超绝热量子导纳：将反射计重新思考为极化子动力学

动态运行的半导体量子点是量子传感器和计算机等许多量子技术的基础。因此，在微波频率下对其电特性进行建模对于模拟其在大型电子电路中的性能至关重要。在这里，我们开发了一种自洽的量子主方程形式，以获得在相干光子浴的作用下量子点隧道耦合到电荷库的导纳。我们找到了导纳的通用表达式，它捕获了众所周知的半经典（热）极限，以及由于与储存库的耦合和光子驱动振幅的增加而分别向寿命和功率展宽状态的转变。此外，我们描述了两种新的光子介导的机制：由 QD 态的修饰决定的 Floquet 展宽，以及由系统中的光子损失决定的展宽。我们的结果提供了一种在广泛的限制范围内模拟量子点高频行为的方法，描述了过去的实验，并提出了量子点-光子相互作用的新颖探索。