当前位置: X-MOL 学术Adv. Electron. Mater. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Tuning Thermal Stability and Power Consumption of Sb2Te3 Phase Change Memory with Metallic Elements
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2024-03-30 , DOI: 10.1002/aelm.202300890
Mingyue Shao 1, 2 , Yang Qiao 3 , Sannian Song 1, 2 , Xing Ding 4 , Zhitang Song 1, 2 , Yuan Xue 1, 2
Affiliation  

Phase change materials have issues in the automotive industry and in‐memory computing due to their limited thermal stability and high power consumption. Consequently, numerous studies are conducted to enhance the performance of these materials. Uncertainty persists regarding the effects and mechanisms of various doping on the parent material. In this study, four metallic doping elements are selected, and their effects on Sb2Te3 are meticulously analyzed through experiments and ab initio calculations. The thermal stability of Sb2Te3 has been somewhat enhanced by doping these four elements, with Ta doping having the most impact. According to the ab initio molecular dynamics, this improvement results from the tetrahedral centered In and the increased coordination numbers of Ta, Ti, and Sc. Sc located at the center of the octahedron can accelerate the crystallization process. Ta, in particular, exerts the greatest influence on the migration rates of Sb and Te, resulting in the slowest grain growth rate. Simultaneously, it maximizes the delay in the transition from the cubic phase to the hexagonal phase. These features are beneficial for reducing power consumption. The elucidation of the distinct effects of doping elements sets the stage for phase change memory to adapt to various application scenarios.

中文翻译:

用金属元素调节 Sb2Te3 相变存储器的热稳定性和功耗

相变材料由于其有限的热稳定性和高功耗而在汽车行业和内存计算中存在问题。因此,进行了大量研究来提高这些材料的性能。关于各种掺杂对母体材料的影响和机制仍然存在不确定性。本研究选取了四种金属掺杂元素,研究了它们对Sb的影响23通过实验和从头计算进行仔细分析。 Sb的热稳定性23通过掺杂这四种元素在一定程度上增强了性能,其中 Ta 掺杂的影响最大。根据从头算分子动力学,这种改进是由于以四面体为中心的 In 以及 Ta、Ti 和 Sc 配位数的增加。 Sc位于八面体的中心,可以加速结晶过程。尤其是Ta,对Sb和Te的迁移速率影响最大,导致晶粒生长速率最慢。同时,它最大限度地延迟了从立方相到六方相的转变。这些特性有利于降低功耗。掺杂元素独特效应的阐明为相变存储器适应各种应用场景奠定了基础。
更新日期:2024-03-30
down
wechat
bug