Expanding the optical communication band is one of the most effective methods of overcoming the nonlinear Shannon capacity limit of single fiber. In this study, GeSn resonance cavity enhanced (RCE) photodetectors (PDs) with an active layer Sn component of 9%$9\%$–10.8%$10.8\%$ were designed and fabricated on an SOI substrate. The GeSn RCE PDs present a responsivity of 0.49 A/W at 2 μm and a 3-dB bandwidth of approximately 40 GHz at 2 μm. Consequently, Si-based 2 μm band optical communication with a transmission rate of 50 Gbps was demonstrated by using a GeSn RCE detector. This work demonstrates the considerable potential of the Si-based 2 μm band photonics in future high-speed and high-capacity optical communication.

中文翻译：

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用于 50 Gbps 硅基 2 μm 频段通信系统的高速 GeSn 谐振腔增强型光电探测器

扩展光通信频段是克服单光纤非线性香农容量限制的最有效方法之一。在这项研究中，在 SOI 衬底上设计并制造了活性层 Sn 成分为9 %$9\%$ – 10.8 %$10.8\%$的 GeSn 谐振腔增强 (RCE) 光电探测器 (PD)。 GeSn RCE PD 在 2 μm 处的响应率为 0.49 A/W，在 2 μm 处的 3 dB 带宽约为 40 GHz。因此，通过使用GeSn RCE探测器演示了传输速率为50 Gbps的Si基2μm波段光通信。这项工作展示了硅基2μm波段光子学在未来高速大容量光通信中的巨大潜力。