Turn-off voltage spikes and switching oscillations caused by fast switching characteristics remain a pressing challenge for SiC MOSFETs. Consequently, an enhanced inductively coupled snubber for oscillation and overvoltage suppression is suggested in this study. It can also achieve a quasi-zero-voltage turn-on. It mainly consists of two parts: an inductively coupled compact PCB circuit and an RCD clamp circuit. First, the LTspice simulation is used to determine the range of parasitic inductance that can realize quasi-zero-voltage switching. Second, the clamping circuit is determined by the theoretical circuit analysis for voltage spike reduction. Finally, all the snubber circuit parameters are substituted together into the established characteristic equation, and the pole assignment method is utilized to determine the required equivalent inductance and resistance by the inductively coupled circuit for fully damped oscillations. In order to better use available space and preserve the high-frequency properties, a small inductively coupled PCB circuit is constructed. The experimental results demonstrate that the suggested enhanced snubber considerably lowers the switching loss while achieving good overvoltage and oscillation suppression.

中文翻译：

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用于准零电压开通、开关振荡和电压尖峰抑制的紧凑型电感耦合 SiC MOSFET 缓冲器


快速开关特性引起的关断电压尖峰和开关振荡仍然是 SiC MOSFET 面临的紧迫挑战。因此，本研究建议采用增强型电感耦合缓冲器来抑制振荡和过压。它还可以实现准零电压开通。它主要由两部分组成：电感耦合紧凑型PCB电路和RCD钳位电路。首先，利用LTspice仿真确定可实现准零电压开关的寄生电感范围。其次，通过理论电路分析确定钳位电路，以减少电压尖峰。最后，将所有缓冲电路参数一起代入所建立的特性方程，并利用极点配置方法确定全阻尼振荡所需的电感耦合电路的等效电感和电阻。为了更好地利用可用空间并保留高频特性，构建了小型电感耦合 PCB 电路。实验结果表明，所建议的增强型缓冲器显着降低了开关损耗，同时实现了良好的过压和振荡抑制。