In the rapidly evolving era of information and intelligence,microelectronic devices are pivotal across various fields, such as mobile devices, big data computing, electric vehicles, and aerospace. However, the electrical performance of these devices often suffers due to residual stress from microelectronic manufacturing. This issue is compounded by the additional thermal stress that accumulates during device operation. Therefore, it is essential to understand, characterize, and control this residual stress to ensure the reliability and efficiency of microelectronic devices. Raman spectroscopy emerges as an invaluable tool for nondestructive, fast, noncontact, and precise testing of micro‐scale mechanics, significantly aiding in stress and strain analysis within microelectronic manufacturing. This article aims to provide a thorough overview of the theory and application beyond a mere compilation of recent advances. Theoretically, it critically evaluates existing models that describe the Raman‐stress relation. Practically, it explores the application of Raman spectroscopy in researching residual stress in various components, including substrate materials, epitaxial films, and packaging. Through a detailed examination of current applications, it highlights the significance of Raman spectroscopy in understanding micro‐scale mechanics. Finally, it offers both theoretical and practical insights into the future developments of Raman‐stress detection technology.

中文翻译：

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微电子制造中的残余应力表征：基于拉曼光谱的分析

在快速发展的信息化和智能化时代，微电子器件在移动设备、大数据计算、电动汽车、航空航天等各个领域都发挥着举足轻重的作用。然而，这些器件的电气性能常常因微电子制造过程中的残余应力而受到影响。设备运行期间积累的额外热应力使这个问题变得更加复杂。因此，有必要了解、表征和控制这种残余应力，以确保微电子器件的可靠性和效率。拉曼光谱已成为一种宝贵的工具，可用于无损、快速、非接触和精确地测试微尺度力学，极大地有助于微电子制造中的应力和应变分析。本文旨在提供对该理论和应用的全面概述，而不仅仅是对最新进展的汇编。从理论上讲，它批判性地评估了描述拉曼应力关系的现有模型。实际上，它探索了拉曼光谱在研究各种组件（包括基板材料、外延膜和封装）的残余应力中的应用。通过对当前应用的详细检查，强调了拉曼光谱在理解微观力学方面的重要性。最后，它为拉曼应力检测技术的未来发展提供了理论和实践见解。