Atomic layer deposition (ALD) of YO thin films was performed on Si substrate by pulsing an unconventional heteroleptic yttrium precursor Y(MeCp)(MePz) and HO alternatively. The thin film grew 0.26–0.28 Å per cycle at relatively low temperature of 195–225 °C in a self-limiting manner with negligible nucleation delay, and is close to stoichiometric (O/Y = 1.48, C, 2.56 at%; N, 1.81 at%) in as-deposited form. Integration of the post-annealed ALD YO film in a metal oxide semiconductor (MOS) capacitor structure exhibits representative electrical properties including a high dielectric constant of 11.4, high electrical breakdown field of 6.1 MV cm and low leakage current density of 9.1 × 10 A cm at − 2 MV cm.

中文翻译：

---

使用杂配钇前驱体和水原子层沉积 Y2O3 作为高 k 电介质

通过交替脉冲非常规杂配钇前驱体 Y(MeCp)(MePz) 和 H2O，在 Si 基底上进行 YO 薄膜的原子层沉积 (ALD)。薄膜在 195–225 °C 的相对较低温度下以自限方式每循环生长 0.26–0.28 Å，成核延迟可忽略不计，并且接近化学计量（O/Y = 1.48，C，2.56 at%；N ，1.81 at%）以沉积状态。将退火后的 ALD YO 薄膜集成在金属氧化物半导体 (MOS) 电容器结构中，表现出典型的电性能，包括 11.4 的高介电常数、6.1 MV cm 的高电击穿场和 9.1 × 10 A cm 的低漏电流密度在− 2 MV cm 处。