Flexible and large-area electronics rely on thin-film transistors (TFTs) to make displays^1,2,3, large-area image sensors^4,5,6, microprocessors^7,8,9,10,11, wearable healthcare patches^12,13,14,15, digital microfluidics^16,17 and more. Although silicon-based complementary metal–oxide–semiconductor (CMOS) chips are manufactured using several dies on a single wafer and the multi-project wafer concept enables the aggregation of various CMOS chip designs within the same die, TFT fabrication is currently lacking a fully verified, universal design approach. This increases the cost and complexity of manufacturing TFT-based flexible electronics, slowing down their integration into more mature applications and limiting the design complexity achievable by foundries. Here we show a stable and high-yield TFT platform for the fabless manufacturing of two mainstream TFT technologies, wafer-based amorphous indium–gallium–zinc oxide and panel-based low-temperature polycrystalline silicon, two key TFT technologies applicable to flexible substrates. We have designed the iconic 6502 microprocessor in both technologies as a use case to demonstrate and expand the multi-project wafer approach. Enabling the foundry model for TFTs, as an analogy of silicon CMOS technologies, can accelerate the growth and development of applications and technologies based on these devices.

柔性大面积电子产品依靠薄膜晶体管 (TFT) 来制造显示器^1,2,3，大面积图像传感器^4,5,6，微处理器^7,8,9,10,11，可穿戴医疗贴片^{12 ,13,14,15} ,数字微流体^16,17等等。尽管硅基互补金属氧化物半导体 (CMOS) 芯片是使用单个晶圆上的多个芯片制造的，并且多项目晶圆概念能够在同一芯片内聚合各种 CMOS 芯片设计，但 TFT 制造目前缺乏完整的经过验证的通用设计方法。这增加了制造基于 TFT 的柔性电子产品的成本和复杂性，减慢了它们与更成熟应用的集成速度，并限制了代工厂可实现的设计复杂性。这里我们展示了一个稳定、高良率的TFT平台，用于两种主流TFT技术的无晶圆厂制造，即基于晶圆的非晶氧化铟镓锌和基于面板的低温多晶硅，这两种适用于柔性基板的关键TFT技术。我们采用这两种技术设计了标志性的 6502 微处理器，作为演示和扩展多项目晶圆方法的用例。类似于硅 CMOS 技术，启用 TFT 的代工模型可以加速基于这些器件的应用和技术的增长和开发。