Two-terminal devices are building blocks for modern electronic systems. However, the typical two-terminal architecture can limit functionality and performance. Here we report a multifunctional three-terminal diode that consists of a traditional two-terminal gallium nitride-based p‒n diode with a monolithically integrated third terminal (Tt) composed of metal/Al₂O₃ dielectric layer directly on the p-layer. When the three-terminal diode operates as an emitter, the light intensity can be tuned by adjusting the bias applied to the Tt, and its modulation bandwidth can be increased from 160 MHz in the original p‒n diode to 263 MHz due to the integrated bias tee function enabled by the Tt. When it operates as a photodetector, both the applied voltage on the Tt and the incident light act as signal inputs that control the magnitude of output photocurrent, providing reconfigurable optoelectronic NAND and NOR logic gates.

两端设备是现代电子系统的构建模块。然而，典型的两端架构会限制功能和性能。在这里，我们报道了一种多功能三端二极管，它由传统的两端氮化镓基 p-n 二极管和直接在 p 层上由金属/Al ₂ O ₃介电层组成的单片集成第三端子 (Tt) 组成。当三端二极管作为发射极工作时，可以通过调整施加到 Tt 的偏置来调谐光强度，并且由于集成的Bias Tee 功能由 Tt 启用。当它作为光电探测器运行时，Tt 上施加的电压和入射光都充当控制输出光电流大小的信号输入，从而提供可重新配置的光电 NAND 和 NOR 逻辑门。