Silicon microbridge structures have attracted the attention of researchers in humidity sensing area owing to their small size and ease of integration with the integrated circuit (IC). However, the preparation of silicon microbridge humidity sensors with high response are still a challenge. This paper proposed a silicon microbridge humidity sensor based on an edge-constrained sandwich sensing structure, in which a graphene oxide core layer with small area was covered on the surface of the silicon bridge by a larger area of Nafion film. Due to the constraint of the peripheral edge, the swelling deformations of this sandwich structure in the vertical direction were effectively magnified during humidity detection. Hence, the proposed humidity sensor exhibited a higher humidity sensitivity (109.97 µV/%RH) compared to the silicon microbridge sensors with general sandwich sensing structure or monolayer sensing film. Meanwhile, the novel sensor also demonstrated a small humidity hysteresis and good linearity in humidity range of 11.3–97.3%.

中文翻译：

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基于边缘约束三明治传感结构的硅微桥高响应湿度传感器

硅微桥结构因其尺寸小且易于与集成电路（IC）集成而引起了湿度传感领域研究人员的关注。然而，制备高响应的硅微桥湿度传感器仍然是一个挑战。本文提出了一种基于边缘约束三明治传感结构的硅微桥湿度传感器，其中小面积的氧化石墨烯核心层被较大面积的Nafion薄膜覆盖在硅桥的表面上。由于周边边缘的约束，这种夹层结构在垂直方向的膨胀变形在湿度检测过程中被有效放大。因此，与具有一般三明治传感结构或单层传感薄膜的硅微桥传感器相比，所提出的湿度传感器表现出更高的湿度灵敏度（109.97 µV/%RH）。同时，新型传感器还表现出较小的湿度滞后和在11.3-97.3%的湿度范围内良好的线性度。