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Impact of Intrinsic Parameter Dispersion on Short-Circuit Reliability of Parallel-Connected Planar and Trench SiC MOSFETs
IEEE Transactions on Industrial Electronics ( IF 7.7 ) Pub Date : 2024-04-26 , DOI: 10.1109/tie.2024.3383026
Renze Yu 1 , Saeed Jahdi 1 , Phil Mellor 1
Affiliation  



中文翻译:

固有参数色散对并联平面和沟槽 SiC MOSFET 短路可靠性的影响

更新日期:2024-04-26
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