The hybrid 2D/3D heterostructure, which synergistically combine the high surface area and superior surface properties of 2D materials with the volumetric advantages and mechanical stability of 3D materials, offer an efficient and unique platform for electronic, optoelectronic, and energy conversion applications. Although this structure offers numerous advantages, optimizing the performance of 2D/3D heterojunction devices still faces challenges such as interface control difficulty, doping uniformity, and scalability for mass production. To simplify and effectively optimize the performance of 2D/3D heterojunction devices, this study delves into the impact of the thickness of 2D BiSe films on the performance of BiSe/GaN heterojunction photodetectors. In thinner BiSe films, a higher surface defect density increases carrier recombination efficiency, while in thicker films, an increase in internal defects impedes carrier transport. Our findings reveal an optimal film thickness that balances surface and internal defects, enhancing carrier dynamics and device performance. Remarkably, the BiSe (14.8 nm)/GaN heterojunction detector exhibits superior broadband response from ultraviolet to near-infrared, with a maximum responsivity of 0.07 A/W, a detectivity of 1.79 × 10 Jones, and an on/off ratio of 1.02 × 10. Additionally, the device demonstrates prolonged stability in response and multispectral imaging capability. This research not only underscores the critical role of film thickness in modulating device performance but also provides novel theoretical and practical guidance for designing high-performance, self-powered, broadband heterojunction photodetectors, offering significant implications for scientific research and practical applications.

中文翻译：

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优化的 2D Bi[公式省略]Se[公式省略]厚度，用于具有多光谱成像能力的宽带、高性能、自供电 2D/3D 异质结光电探测器

混合2D/3D异质结构将2D材料的高表面积和优异的表面特性与3D材料的体积优势和机械稳定性协同结合，为电子、光电和能量转换应用提供了高效且独特的平台。尽管这种结构具有众多优点，但优化2D/3D异质结器件的性能仍然面临界面控制难度、掺杂均匀性和批量生产的可扩展性等挑战。为了简化并有效优化2D/3D异质结器件的性能，本研究深入研究了2D BiSe薄膜的厚度对BiSe/GaN异质结光电探测器性能的影响。在较薄的 BiSe 薄膜中，较高的表面缺陷密度会提高载流子复合效率，而在较厚的薄膜中，内部缺陷的增加会阻碍载流子传输。我们的研究结果揭示了平衡表面和内部缺陷、增强载流子动力学和器件性能的最佳薄膜厚度。值得注意的是，BiSe（14.8 nm）/GaN异质结探测器表现出从紫外到近红外的优异宽带响应，最大响应率为0.07 A/W，探测率为1.79 × 10 Jones，开/关比为1.02 × 10. 此外，该设备还表现出长期的响应稳定性和多光谱成像能力。这项研究不仅强调了薄膜厚度在调制器件性能中的关键作用，而且为设计高性能、自供电、宽带异质结光电探测器提供了新颖的理论和实践指导，对科学研究和实际应用具有重要意义。