Beta phase-gallium oxide (-GaO) is an emerging ultrawide bandgap semiconductor but lacks efficient p-type doping, which hinders development of high-performance bipolar heterojunction devices. This study introduces the synthesis and characterization of a monocrystalline GaAs/-GaO heterojunction, employing advanced semiconductor grafting technology. The heterojunction was innovatively fabricated by grafting a p-type GaAs single crystal nanomembrane to an AlO-coated n-type -GaO epitaxial substrate. The synthesized heterojunction was comprehensively characterized. The band alignment of grafted GaAs/-GaO heterojunction was experimentally constructed through X-ray photoelectron spectroscopy (XPS), and the result is in accordance with the theorical prediction based on the electron affinity rule. The resulting GaAs/-GaO diodes built on this heterojunction exhibit remarkable performance metrics, including an ideality factor of 1.23, a high rectification ratio of 8.04 × 10 at ± 4 V, and a turn on voltage at 2.35 V. Furthermore, at + 5 V, the diode displays a large current density of 2500 A/cm along with a low ON resistance of 2 mΩ∙cm. This study marks the first successful demonstration of a high-quality grafted GaAs/-GaO heterojunction, establishing a critical building block for the further development of bipolar GaO-based device applications such as diodes, transistors, and thyristors.

中文翻译：

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单晶GaAs/β-Ga2O3p-n异质结的合成及特性


β相氧化镓（-GaO）是一种新兴的超宽带隙半导体，但缺乏有效的p型掺杂，这阻碍了高性能双极异质结器件的发展。本研究介绍了采用先进半导体接枝技术的单晶 GaAs/-GaO 异质结的合成和表征。该异质结是通过将 p 型 GaAs 单晶纳米膜接枝到涂覆 Al2O3 的 n 型 GaO 外延基板上而创新地制造的。对合成的异质结进行了全面表征。通过X射线光电子能谱（XPS）实验构建了接枝GaAs/-GaO异质结的能带排列，结果与基于电子亲和力规则的理论预测一致。基于该异质结构建的 GaAs/-GaO 二极管表现出卓越的性能指标，包括 1.23 的理想因子、± 4 V 时 8.04 × 10 的高整流比以及 2.35 V 的开启电压。此外，在 + 5 V 时，该二极管具有 2500 A/cm 的大电流密度以及 2 mΩ∙cm 的低导通电阻。这项研究标志着高质量接枝 GaAs/-GaO 异质结的首次成功演示，为进一步开发双极 GaO 基器件应用（例如二极管、晶体管和晶闸管）奠定了关键的基础。