The understanding and suppression of grown-in defects are expected to promote the semiconductor radiation detector performance. Here, we report the origin of liquid inclusion defects in CsPbBr₃ crystals grown using the inverse temperature crystallization (ITC) method. The formation process of liquid inclusions is observed in situ and simultaneously the formation mechanism for liquid inclusions in CsPbBr₃ bulk crystals is proposed. Based on the COMSOL Multiphysics simulation, a model is developed combining concentration and temperature gradients, associated with natural convection during crystallization, and is responsible for the liquid inclusions. By introducing forced convection to eliminate liquid inclusions, the crystalline quality of CsPbBr₃ has been significantly improved, with the half-peak width of X-ray rocking curves optimized from 0.101° to 0.037°. A near one order of magnitude increase in bulk resistivity has been obtained while the hole mobility was improved to 142.95 cm⁻² V⁻¹ s⁻¹, evaluated by the time-of-flight technique according to α particle induced pulses. Furthermore, the CsPbBr₃ crystals free from liquid inclusions enable the fabrication of an asymmetric planar Au/CsPbBr₃/Sn device with an energy resolution of 7.2% illuminated with ¹³⁷Cs@662 keV γ-rays.

中文翻译：

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用于伽马射线检测的溶液生长 CsPbBr3 块状晶体中的动力学调制消除前体液体包裹体


对生长缺陷的理解和抑制有望提高半导体辐射探测器的性能。在这里，我们报告了使用逆温结晶（ITC）方法生长的 CsPbBr ₃ 晶体中液体夹杂物缺陷的起源。原位观察了液体包裹体的形成过程，同时提出了CsPbBr ₃ 块状晶体中液体包裹体的形成机制。基于 COMSOL Multiphysics 模拟，开发了一个结合浓度和温度梯度的模型，该模型与结晶过程中的自然对流相关，并负责液体夹杂物。通过引入强制对流消除液体夹杂物，CsPbBr ₃ 的结晶质量得到显着改善，X射线摇摆曲线半峰宽从0.101°优化至0.037°。通过时间评估，体电阻率增加了近一个数量级，同时空穴迁移率提高至 142.95 cm ⁻² V ⁻¹ s ⁻¹ 根据 α 粒子诱导脉冲的飞行技术。此外，不含液体夹杂物的 CsPbBr ₃ 晶体能够制造不对称平面 Au/CsPbBr ₃ /Sn 器件，在 ¹³⁷