Plasmonic semiconductors are promising candidates for developing energy conversion devices due to their tunable band gap, cost-effectiveness, and nontoxicity. Such materials exhibit remarkable capabilities for harvesting infrared photons, which constitute half of the solar energy spectrum. Herein, we have synthesized near-infrared (NIR) active Cu_xIn_yS nanocrystals and Cu_xIn_yS/CdS heterostructure nanocrystals (HNCs) to investigate plasmon-induced charge transfer dynamics on an ultrafast time scale. Employing femtosecond transient absorption spectroscopy, we demonstrate that upon exciting the HNCs with sub-band gap NIR photons (λ = 840 nm), the hot holes are generated in the valence band of plasmonic Cu_xIn_yS and transferred to the adjacent semiconductor. The decreased signal intensity and accelerated hole phonon relaxation dynamics for HNCs reveal efficient transfer of plasmon-induced hot carriers from Cu_xIn_yS to CdS under both 840 and 350 nm laser excitations, providing a pathway for enhanced carrier utilization. These findings shed light on the potential of ternary chalcogenides in plasmonic applications, highlighting efficient hot carrier extraction to adjacent semiconductors.

中文翻译：

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非化学计量 CuxInyS/CdS 异质晶体中等离激元诱导的超快热空穴传输


等离激元半导体由于其带隙可调、成本效益和无毒性，是开发能量转换器件的有希望的候选者。此类材料在收集红外光子方面表现出卓越的能力，红外光子占太阳能光谱的一半。在此，我们合成了近红外（NIR）活性Cu _x In _y S纳米晶和Cu _x In _y S/CdS异质结构纳米晶体（HNC）用于在超快时间尺度上研究等离激元诱导的电荷转移动力学。采用飞秒瞬态吸收光谱，我们证明在用子带隙近红外光子（λ = 840 nm）激发 HNC 时，等离激元 Cu _x 的价带中会产生热空穴。 S并转移到相邻的半导体。 HNC 的信号强度降低和空穴声子弛豫动力学加速揭示了在 840 和 350 nm 激光激发下等离激元诱导的热载流子从 Cu _x In _y S 到 CdS 的有效转移，提供提高载体利用率的途径。这些发现揭示了三元硫属化物在等离子体应用中的潜力，强调了对相邻半导体的有效热载流子提取。