The coupling of ferroelectric, photoelectric, semiconducting, and phase transition properties make two-dimensional (2D) In2Se3 a material platform with great application potential in the phase change memory, intelligent sensing, and in-memory computing devices. However, at present, there are unclear phase transition mechanisms and ferroelectric dynamics in 2D In2Se3, which seriously hinder the development of device applications. In this review, we mainly highlight the phase transition mechanisms and ferroelectric devices of In2Se3 beginning with the history of bulk In2Se3 and of 2D In2Se3. The phase transition relations of the four In2Se3 phases, including α-, β-, β′-, and γ-phases, under various driving forces, are summarized. The different driving forces, including temperature, laser, electric-field, vacancy, doping, and strain, are introduced and discussed. Moreover, the phase-control growth of 2D In2Se3 films and their novel ferroelectric device applications are demonstrated. Finally, a perspective on future research directions of 2D In2Se3 is provided.

中文翻译：

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二维In2Se3相变及铁电器件研究进展

铁电、光电、半导体和相变特性的耦合使二维（2D）In2Se3成为在相变存储器、智能传感和内存计算设备中具有巨大应用潜力的材料平台。然而，目前二维In2Se3的相变机制和铁电动力学尚不清楚，严重阻碍了器件应用的发展。在这篇综述中，我们主要从块状 In2Se3 和二维 In2Se3 的历史开始，重点介绍 In2Se3 的相变机制和铁电器件。总结了四种 In2Se3 相（包括 α-、β-、β'-和 γ-相）在不同驱动力下的相变关系。介绍并讨论了不同的驱动力，包括温度、激光、电场、空位、掺杂和应变。此外，还展示了二维 In2Se3 薄膜的相控生长及其新型铁电器件应用。最后，对二维In2Se3的未来研究方向进行了展望。