Despite the considerable research interest in InGaN‐based microdisk lasers, owing to their unique circular geometry distinct from vertical cavity surface‐emitting lasers (VCSEL) or edge‐emitting lasers, commercial products remain scant due to deficient performance under electrical injection. This study proposes an innovative method integrating a thin‐film configuration with a metallic undercut, significantly augmenting optical confinement, overlap factor, and thus lasing performance. This approach results in a diminished lasing threshold from 1500 to 670 Wcm−2 and a record high quality (Q) factor of 10100 under electrical injection. Strain relaxation in the metallic undercut, identified via scanning near‐field optical microscopy (SNOM), beneficially mitigates the Quantum Confined Stark Effect (QCSE), boosting the internal quantum efficiency of the laser. Furthermore, a beneficial blue‐shift in the emission spectrum aligns with the lasing peak, strengthening the Q factor. A tactfully implemented recessed top contact enables electrical injection lasing without optical performance compromise. The study provides invaluable insights for future microdisk laser technology advancements, potentially leading to specialized functionalities, including quantum optics, thereby opening new avenues for research and applications in this field.

中文翻译：

---

通过同时增强光限制和重叠系数的高性能电注入 InGaN 微盘激光器

尽管人们对基于 InGaN 的微盘激光器有相当大的研究兴趣，但由于其独特的圆形几何形状不同于垂直腔表面发射激光器 (VCSEL) 或边缘发射激光器，但由于电注入性能不足，商业产品仍然很少。这项研究提出了一种创新方法，将薄膜配置与金属底切相结合，显着增强光学限制、重叠系数，从而提高激光性能。这种方法可将激光阈值从 1500 Wcm 降低至 670 Wcm−2在电注入下，品质 (Q) 系数达到创纪录的 10100。通过扫描近场光学显微镜 (SNOM) 识别出金属底切中的应变松弛，有利于减轻量子限制斯塔克效应 (QCSE)，从而提高激光器的内部量子效率。此外，发射光谱中有益的蓝移与激光峰值一致，从而增强了 Q 因子。巧妙实施的凹进顶部接触可实现电注入激光，而不会影响光学性能。这项研究为未来微盘激光器技术的进步提供了宝贵的见解，有可能带来包括量子光学在内的专门功能，从而为该领域的研究和应用开辟新途径。