Quantum-dot light-emitting diodes (QLEDs), a kind of promising optoelectronic device, demonstrate potential superiority in next-generation display technology. Thermal cross-linked hole transport materials (HTMs) have been employed in solution-processed QLEDs due to their excellent thermal stability and solvent resistance, whereas the unbalanced charge injection and high cross-linking temperature of cross-linked HTMs can inhibit the efficiency of QLEDs and limit their application. Herein, a low-temperature cross-linked HTM of 4,4′-bis(3-(((4-vinylbenzyl)oxy)methyl)-9H-carbazol-9-yl)-1,1′-biphenyl (DV-CBP) with a flexible styrene side chain is introduced, which reduces the cross-linking temperature to 150 °C and enhances the hole mobility up to 1.01 × 10^–3 cm² V^–1 s^–1. More importantly, the maximum external quantum efficiency of 21.35% is successfully obtained on the basis of the DV-CBP as a cross-linked hole transport layer (HTL) for blue QLEDs. The low-temperature cross-linked high-mobility HTL using flexible side chains could be an excellent alternative for future HTL development.

中文翻译：

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用于高性能蓝色量子点发光二极管的低温交联空穴传输层


量子点发光二极管（QLED）是一种很有前景的光电器件，在下一代显示技术中展现出潜在的优势。热交联空穴传输材料（HTM）因其优异的热稳定性和耐溶剂性而被用于溶液加工的QLED，而交联HTM的不平衡电荷注入和高交联温度会抑制QLED的效率并限制其应用。本文中，4,4'-双(3-(((4-乙烯基苄基)氧基)甲基)-9H-咔唑-9-基)-1,1'-联苯(DV-)的低温交联HTM引入具有柔性苯乙烯侧链的CBP)，将交联温度降低至150℃，并将空穴迁移率提高至1.01×10 ^–3 cm ² V ^–1 s ^–1 。更重要的是，在DV-CBP作为蓝色QLED交联空穴传输层（HTL）的基础上，成功获得了21.35%的最大外量子效率。使用柔性侧链的低温交联高迁移率HTL可能是未来HTL开发的绝佳替代方案。