Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, with their atomically thin thickness, hold great promise for future electronic devices. One challenge to achieving high-performance 2D semiconductor field effect transistors (FET) is the high contact resistance at the metal–semiconductor interface. In this study, we develop a charge-transfer doping strategy with WSe₂/α-RuCl₃ heterostructures to achieve low-resistance ohmic contact for p-type monolayer WSe₂ transistors. We show that hole doping as high as 3 × 10¹³ cm^–2 can be achieved in the WSe₂/α-RuCl₃ heterostructure due to its type-III band alignment, resulting in an ohmic contact with resistance of 4 kΩ μm. Based on that, we demonstrate p-type WSe₂ transistors with an on-current of 35 μA·μm^–1 and an I_ON/I_OFF ratio exceeding 10⁹ at room temperature.

中文翻译：

---

与 P 型单层 WSe2 的低电阻接触


未来的先进微电子学可能需要硅以外的半导体沟道材料。二维 (2D) 半导体具有原子级薄的厚度，为未来的电子设备带来了巨大的前景。实现高性能二维半导体场效应晶体管（FET）的一项挑战是金属-半导体界面处的高接触电阻。在本研究中，我们开发了一种利用 WSe ₂ /α-RuCl ₃ 异质结构的电荷转移掺杂策略，以实现 p 型单层 WSe ₂ /α-RuCl ₃ 中可以实现高达 3 × 10 ¹³ cm ^–2 的空穴掺杂由于其 III 型能带排列而异质结构，导致电阻为 4 kΩ μm 的欧姆接触。在此基础上，我们展示了p型WSe ₂ 晶体管，其导通电流为35 μA·μm ^–1 ，I _ON /I _OFF 比率超过10 ⁹ 。