The Lifshitz transition (LT), a topological structure transition of Fermi surfaces, can induce various intricate physical properties in metallic materials. In this study, through first-principles calculations, we explore the nontrivial effect of the LT on the intrinsic resistivity of the Cu₂N monolayer arising from electron–phonon (el-ph) scattering. We find that when the LT is induced by electron doping, the multibranch Fermi surface simplifies into a single-band profile. Such an LT leads to a decoupling of low-frequency flexural phonons from el-ph scattering due to mirror symmetry. Consequently, the resistivity of the Cu₂N monolayer at room temperature significantly decreases, approaching that of slightly doped graphene, and highlighting the Cu₂N monolayer as a highly conductive two-dimensional metal. Moreover, this LT can bring about a nonlinear temperature dependence of the intrinsic resistivity at a high temperature.

中文翻译：

---

Lifshitz转变对Cu2N单层本征电阻率的影响

利夫希茨转变（LT）是费米表面的拓扑结构转变，可以在金属材料中诱发各种复杂的物理性质。在本研究中，通过第一性原理计算，我们探讨了 LT 对由电子声子 (el-ph) 散射引起的Cu ₂ N 单层本征电阻率的重要影响。我们发现，当电子掺杂引起 LT 时，多分支费米面简化为单能带轮廓。由于镜像对称，这种 LT 导致低频弯曲声子与 el-ph 散射解耦。因此，Cu ₂ N单层在室温下的电阻率显着降低，接近轻掺杂石墨烯的电阻率，并突出了Cu ₂ N单层作为高导电二维金属的特性。此外，该LT可以带来高温下本征电阻率的非线性温度依赖性。