van der Waals (vdWs) dielectrics are widely used in nanoelectronics to preserve the intrinsic properties of two-dimensional (2D) semiconductors. However, achieving aligned growth of 2D semiconductors and their direct utilization on original vdWs epitaxial dielectrics to avoid disorders poses significant challenges. Here, a hydromechanical strategy for aligned epitaxy of 2D materials on naturally occurring vdWs mica dielectrics is developed. By combining density functional theory with Lagrange’s group theorem, a quantitative criterion for 2D material epitaxy on 6-fold symmetric vdWs dielectrics is established. Moreover, the as-grown ultrathin Bi₂O₂Se-channeled field-effect transistor, with a hybrid dielectric layer, achieves a superior current on/off ratio (1.4 × 10⁷) and high carrier mobility (22.4 cm² V⁻¹ S⁻¹) by directly integrating as-grown 2D materials/vdWs dielectrics. This work provides a powerful methodological platform for aligned 2D material synthesis, alignment direction prediction, and intrinsic property investigation, laying the foundation for advanced electronics on as-grown 2D materials/vdWs dielectrics.

范德华 (vdW) 电介质广泛应用于纳米电子学中，以保持二维 (2D) 半导体的固有特性。然而，实现二维半导体的对齐生长并在原始 vdW 外延电介质上直接使用以避免紊乱带来了重大挑战。这里，开发了一种用于在天然存在的 vdWs 云母电介质上对齐外延 2D 材料的流体力学策略。将密度泛函理论与拉格朗日群定理相结合，建立了6重对称vdWs电介质上二维材料外延的定量标准。此外，所生长的超薄 Bi ₂ O ₂ Se 沟道场效应晶体管具有混合介电层，实现了优异的电流开/关比（1.4 × 10 < b2> ）和高载流子迁移率（22.4 cm ² V ⁻¹ S ⁻¹ ），通过直接集成生长的 2D 材料/vdWs 电介质。这项工作为对准二维材料合成、对准方向预测和固有特性研究提供了强大的方法平台，为基于原生二维材料/vdWs电介质的先进电子学奠定了基础。