Chiral perovskites play a pivotal role in spintronics and optoelectronic systems attributed to their chiral-induced spin selectivity (CISS) effect. Specifically, they allow for spin-polarized charge transport in spin light-emitting diodes (LEDs), yielding circularly polarized electroluminescence at room temperature without external magnetic fields. However, chiral lead bromide-based perovskites have yet to achieve high-performance green emissive spin-LEDs, owing to limited CISS effects and charge transport. Herein, we employ dimensional regulation and Sn²⁺-doping to optimize chiral bromide-based perovskite architecture for green emissive spin-LEDs. The optimized (PEA)_x(S/R-PRDA)_2–xSn_0.1Pb_0.9Br₄ chiral perovskite film exhibits an enhanced CISS effect, higher hole mobility, and better energy level alignment with the emissive layer. These improvements allow us to fabricate green emissive spin-LEDs with an external quantum efficiency (EQE) of 5.7% and an asymmetry factor |g_CP-EL| of 1.1 × 10^–3. This work highlights the importance of tailored perovskite architectures and doping strategies in advancing spintronics for optoelectronic applications.

中文翻译：

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用于绿色发射自旋发光二极管的具有增强自旋选择性的手性钙钛矿的尺寸和掺杂工程


手性钙钛矿由于其手性诱导自旋选择性（CISS）效应而在自旋电子学和光电系统中发挥着关键作用。具体来说，它们允许自旋发光二极管（LED）中的自旋极化电荷传输，在室温下无需外部磁场即可产生圆极化电致发光。然而，由于 CISS 效应和电荷传输有限，手性溴化铅基钙钛矿尚未实现高性能绿色发光自旋 LED。在此，我们采用尺寸调节和 Sn ²⁺ 掺杂来优化绿色发光自旋 LED 的手性溴化物钙钛矿结构。优化后的 (PEA) _x (S/R-PRDA) _2–x Sn _0.1 Pb _0.9 Br ₄ 手性钙钛矿薄膜表现出增强的 CISS 效应、更高的空穴迁移率以及与发射层更好的能级对准。这些改进使我们能够制造外量子效率 (EQE) 为 5.7% 且不对称因子 |g _CP-EL | 的绿色发射自旋 LED。 1.1 × 10 ^–3 。这项工作强调了定制钙钛矿结构和掺杂策略在推进光电应用自旋电子学方面的重要性。