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Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET based on Transient Current
IEEE Transactions on Power Electronics ( IF 6.7 ) Pub Date : 2024-05-07 , DOI: 10.1109/tpel.2024.3397672 Chunsheng Guo 1 , Shaoxiong Cui 1 , Yumeng Li 1 , Bojun Yao 1 , Yamin Zhang 1 , Hui Zhu 1 , Meng Zhang 1 , Shiwei Feng 1
中文翻译：
基于瞬态电流的不同栅氧化陷阱对SiC MOSFET阈值电压漂移的影响研究
更新日期：2024-05-07
IEEE Transactions on Power Electronics ( IF 6.7 ) Pub Date : 2024-05-07 , DOI: 10.1109/tpel.2024.3397672 Chunsheng Guo 1 , Shaoxiong Cui 1 , Yumeng Li 1 , Bojun Yao 1 , Yamin Zhang 1 , Hui Zhu 1 , Meng Zhang 1 , Shiwei Feng 1
Affiliation
中文翻译：
基于瞬态电流的不同栅氧化陷阱对SiC MOSFET阈值电压漂移的影响研究
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