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Type-dependent hot carrier behavior in photoelectrochemical reduction and oxidation of Au/GaN junction photoelectrodes
Applied Surface Science ( IF 6.7 ) Pub Date : 2024-04-27 , DOI: 10.1016/j.apsusc.2024.160147
Do Wan Kim , Jeong-Sik Jo , Jinho Lee , Doh-Jun Kim , Mingu Kang , Hungu Kang , Hyo Jae Yoon , Seongpil Hwang , Jae-Won Jang

In junctions with semiconductors, plasmonic metal nanoparticles (NPs) can be utilized to efficiently harness solar energy by collecting hot carriers. However, the behavior of hot carriers at the interfaces between semiconductors with opposite doping types is not fully elucidated. Here, Au NPs are attached to n-doped (Au/-GaN) or p-doped gallium nitrides (Au/-GaN) to examine the photoelectrochemical performance regarding hot carrier behavior. Direct surface potential measurements revealed that electrons are collected in n-type GaN (-GaN) when illuminated, while hot holes remain in Au NPs for oxidation reactions via the plasmonic process. Conversely, holes are collected in -type GaN (-GaN), thereby promoting the reduction reaction by the electrons left in Au NPs. Specifically, the change in surface potential difference induced by green light illumination in Au/-GaN is four times greater than that observed in Au/-GaN. Conversely, the changes in opencircuit potential and photocurrent density under light illumination are approximately six times more significant in Au/-GaN compared to Au/-GaN. This difference in efficiency can be attributed to the more favorable oxidation reaction occurring in Au NPs at the interface with GaN materials, as opposed to the reduction reaction, due to the difference in band alignment between the Au/GaN junction systems.

中文翻译:


Au/GaN结光电极光电化学还原和氧化中类型相关的热载流子行为



在与半导体的连接中,等离激元金属纳米粒子(NP)可用于通过收集热载流子来有效利用太阳能。然而,具有相反掺杂类型的半导体之间的界面处的热载流子的行为尚未完全阐明。在这里,Au NP 附着在 n 掺杂 (Au/-GaN) 或 p 掺杂氮化镓 (Au/-GaN) 上,以检查有关热载流子行为的光电化学性能。直接表面电位测量表明,当光照时,电子会被收集在 n 型 GaN (-GaN) 中,而热空穴则保留在 Au NP 中,通过等离子体过程进行氧化反应。相反,空穴被收集在-型GaN(-GaN)中,从而促进Au NP中留下的电子的还原反应。具体而言,Au/-GaN 中绿光照射引起的表面电势差变化是 Au/-GaN 中观察到的表面电势差变化的四倍。相反,Au/-GaN 在光照射下的开路电位和光电流密度的变化大约是 Au/-GaN 的六倍。这种效率差异可归因于 Au 纳米粒子在与 GaN 材料界面处发生的更有利的氧化反应,而不是还原反​​应,这是由于 Au/GaN 结系统之间的能带排列差异所致。
更新日期:2024-04-27
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