Recently, the two-dimensional semiconductor CB monolayer has attracted much attention owing to its excellent physical, optical, and electronic properties. In this work, the origin of electron-phonon interaction (EPI) on the thermal properties of CB by -type and -type doping is systematically investigated via first-principles calculations to provide fundamental knowledge for the thermal management the CB-based electronic devices. The carrier concentrations for the largest reduction of the lattice thermal conductivity () appear at 4 × 10 cm for -type and 9 × 10 cm for -type, which is closely related to the electron density of states (DOS). The boron (B) atoms break the structural symmetry and induce mass disorder scattering, which renders CB more prone to the influence of EPI. Moreover, the electronic band structure in the CB monolayer exhibits multivalley characteristics, which leads to an intervalley scattering. It is worth noting that the anisotropy in the CB monolayer can be significantly enhanced by EPI. Additionally, an abnormal phenomenon of strong electron-phonon scattering but low electron-phonon coupling strength is found in CB monolayer, which indicates that large electron-phonon coupling strength is sufficient but not necessary for strong electron-phonon scattering.

中文翻译：

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探究半导体C3B单层声子输运中异常强的电子-声子相互作用的起源


近年来，二维半导体CB单层由于其优异的物理、光学和电子性能而备受关注。在这项工作中，通过第一性原理计算，系统地研究了β-型和β-型掺杂对CB热性能的电子声子相互作用（EPI）的起源，为基于CB的电子器件的热管理提供基础知识。晶格热导率 () 降低最大的载流子浓度出现在 - 型的 4 × 10 cm 处和 - 型的 9 × 10 cm 处，这与电子态密度 (DOS) 密切相关。硼（B）原子打破了结构对称性并引起质量无序散射，这使得CB更容易受到EPI的影响。此外，CB单层中的电子能带结构表现出多谷特性，从而导致层间散射。值得注意的是，EPI 可以显着增强 CB 单层的各向异性。此外，在CB单层中发现了强电子-声子散射但低电子-声子耦合强度的异常现象，这表明大的电子-声子耦合强度对于强电子-声子散射来说是足够的，但不是必需的。