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Interfacial-electric-field guiding design of a Type-I FeIn2S4@ZnIn2S4 heterojunction with ohmic-like charge transfer mechanism for highly efficient solar H2 evolution
Applied Surface Science ( IF 6.7 ) Pub Date : 2024-05-03 , DOI: 10.1016/j.apsusc.2024.160206
Qianmin Fan , Zhaochao Yan , Jiangshan Li , Xianqiang Xiong , Kai Li , Guoliang Dai , Yanxian Jin , Chenglin Wu

Manipulating charge transfer pathways in Type-I heterojunctions is essential to address the mismatched energy bands and the often-neglected internal electric field (IEF). This study reports the successful engineering of a Type-I FeInS@ZnInS heterojunction exhibiting an ohmic-like charge transfer mechanism, driven by the IEF arising from considerable Fermi level differences. The ohmic-like Type-I junction facilitates efficient electron transfer from ZnInS to FeInS and preserves the oxidizing holes in ZnInS for effective scavenger oxidation. This unique feature prevents the inefficient charge separation commonly observed in conventional Type-I heterojunctions. Due to the advantageous ohmic-like electron transfer, an optimized composition of FeInS@ZnInS with a weight percentage of 10 % FeInS achieves a notable hydrogen evolution rate of 4.21 mmol gh, six times higher than isolated ZnInS. Furthermore, the validation of the ohmic-like charge transfer mechanism is supported by theoretical analyses and advanced characterization techniques, including X-ray photoelectron spectroscopy (XPS), Kelvin probe force microscopy (KPFM), and surface photovoltage (SPV) measurements. This present study introduces a pioneering prototype that shows the successful incorporation of the desired charge transfer pathway in a Type-I heterojunction through the implementation of an IEF regulation strategy.

中文翻译:


具有类欧姆电荷转移机制的 I 型 FeIn2S4@ZnIn2S4 异质结的界面电场引导设计,用于高效太阳能析氢



操纵 I 型异质结中的电荷转移路径对于解决不匹配的能带和经常被忽视的内部电场 (IEF) 至关重要。这项研究报告了 I 型 FeInS@ZnInS 异质结的成功设计,该异质结表现出类似欧姆的电荷转移机制,由相当大的费米能级差异产生的 IEF 驱动。类似欧姆的 I 型结促进了从 ZnInS 到 FeInS 的有效电子转移,并保留了 ZnInS 中的氧化空穴以进行有效的清除剂氧化。这一独特的功能可防止传统 I 型异质结中常见的低效电荷分离。由于有利的类欧姆电子转移,重量百分比为 10% FeInS 的 FeInS@ZnInS 的优化组成实现了 4.21 mmol gh 的显着析氢速率,比孤立的 ZnInS 高六倍。此外,类欧姆电荷转移机制的验证得到了理论分析和先进表征技术的支持,包括 X 射线光电子能谱 (XPS)、开尔文探针力显微镜 (KPFM) 和表面光电压 (SPV) 测量。本研究介绍了一个开创性的原型,该原型表明通过实施 IEF 调节策略成功地将所需的电荷转移途径纳入 I 型异质结中。
更新日期:2024-05-03
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