The termination of surface‐dangling bonds on silicon through hydrogen atoms, also known as Si–H, can achieve chemical passivation and reduce surface states in the electronic bandgap, thus altering electronic properties. Through a comprehensive study of doping levels (1014–1020 cm−3) and types (n and p), a consistent surface dipole trend induced by Si–H termination is discovered. It is achieved by redistributing surface charges and establishing thermal equilibrium with the chemical bond. To resolve this, the surface work function, surface electron affinity, and the energy difference between the valence band and the Fermi level are measured by employing the Kelvin probe, X‐ray photoelectron spectroscopy, and photoelectron yield spectroscopy methods. These findings are further validated through ab initio simulations. This finding has immense implications not only for eliminating electronic defects at semiconductor interfaces, which is crucial in microelectronics but also for developing and engineering hybrid interfaces and heterojunctions with controlled electronic properties.

中文翻译：

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不同硅掺杂水平和 H 端接表面类型的表面偶极子的均匀趋势

通过氢原子（也称为 Si-H）终止硅上的表面悬挂键，可以实现化学钝化并减少电子带隙中的表面态，从而改变电子特性。通过对兴奋剂水平的全面研究（1014–1020厘米−3）和类型（n 和 p），发现了由 Si-H 终止引起的一致的表面偶极趋势。它是通过重新分布表面电荷并与化学键建立热平衡来实现的。为了解决这个问题，采用开尔文探针、X射线光电子能谱和光电子产额能谱方法测量表面功函数、表面电子亲和力以及价带和费米能级之间的能量差。这些发现通过从头开始模拟得到进一步验证。这一发现不仅对于消除半导体界面的电子缺陷（这在微电子学中至关重要）具有巨大的意义，而且对于开发和设计具有受控电子特性的混合界面和异质结也具有巨大的意义。