Self-powered photodetectors operate without external power sources and are therefore of interest for wireless light sensing applications in different environments. To ensure high values of both linear dynamic range and bandwidth, optically generated charge carriers must be separated and extracted efficiently even in the absence of an external bias, and charge carrier transport effects that limit performance data in bulk semiconductor devices must be minimized. Here, we present a self-powered photodetector device for the visible spectral range, where an ultrathin MOCVD-grown MoS₂–WS₂ heterostructure with type-II band alignment is embedded into a p–n architecture to enforce efficient separation and extraction of optically generated electron–hole pairs. Our scalable, 6 mm²-sized photodetector prototype exhibits a linear dynamic range of at least 110 dB and a record high bandwidth with a cutoff frequency beyond f_c = 80 MHz.

中文翻译：

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基于可扩展 MOCVD 生长的 WS2–MoS2 异质结构的自供电光电探测器

自供电光电探测器无需外部电源即可运行，因此对于不同环境中的无线光传感应用很有意义。为了确保线性动态范围和带宽的高值，即使在没有外部偏置的情况下，也必须有效地分离和提取光学生成的电荷载流子，并且必须最小化限制体半导体器件性能数据的电荷载流子传输效应。在这里，我们提出了一种适用于可见光谱范围的自供电光电探测器装置，其中具有 II 型能带排列的超薄 MOCVD 生长的 MoS ₂ –WS ₂异质结构嵌入到 ap-n 架构中，以强制有效分离和提取光学产生的光电子-空穴对。我们的可扩展的 6 mm ²尺寸光电探测器原型具有至少 110 dB 的线性动态范围和创纪录的高带宽，截止频率超过f _c = 80 MHz。