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Minimizing Output Capacitance Loss in GaN Power HEMT
IEEE Transactions on Power Electronics ( IF 6.7 ) Pub Date : 2024-05-10 , DOI: 10.1109/tpel.2024.3399237 Qihao Song 1 , Adam Briga 2 , Valery Veprinsky 2 , Roman Volkov 2 , Qiang Li 1 , Yuhao Zhang 1
中文翻译:
最大限度地减少 GaN 功率 HEMT 的输出电容损耗
更新日期:2024-05-10
IEEE Transactions on Power Electronics ( IF 6.7 ) Pub Date : 2024-05-10 , DOI: 10.1109/tpel.2024.3399237 Qihao Song 1 , Adam Briga 2 , Valery Veprinsky 2 , Roman Volkov 2 , Qiang Li 1 , Yuhao Zhang 1
Affiliation
中文翻译:
最大限度地减少 GaN 功率 HEMT 的输出电容损耗