Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention for their optical and gas-sensing applications due to their exceptional sensitivity. Reliable selectivity and low power consumption are two major requirements for photodetector and gas sensor applications in next-generation electronic devices and the Internet of Things. Self-powered sensors (especially photovoltaic gas sensors) can solve these problems. In this study, for the first time, we report 2D TMDs (NbSe-MoS hybrid) on a SiO/Si substrate to fabricate photovoltaic self-powered gas sensors. The gas sensors are operated by the photovoltaic effect of the NbSe-MoS nanostructure, which is prepared using the liquid phase exfoliation process. Initially, it was revealed that the present hybrid material exhibits photovoltaic properties under light illumination, with a circuit current of 0.25 µA and a circuit voltage of 34 mV. The NbSe-MoS nanostructure characteristics were then used for NH gas sensing at different concentrations, and the gas sensing response was detected from low (8.8 % at 10 ppm) to high (28.8 % at 500 ppm) concentrations. The built-in electric field occurred between the NbSe-MoS junction and eventually operated as a driving force for NbSe-MoS gas sensing without an external bias voltage. The physisorption of gas molecules on their surface prompts a charge-transfer mechanism that improves the gas sensor response. The combined outcome of NbSe-MoS heterostructures could pave way to next-generation gas sensing device fabrications.

中文翻译：

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基于二维 MoS2 并入 NbSe2 纳米棒异质结构的光伏感应自供电气体传感器，用于室温下 NH3 气体传感


二维 (2D) 过渡金属二硫属化物 (TMD) 因其卓越的灵敏度而在光学和气体传感应用中引起了广泛关注。可靠的选择性和低功耗是下一代电子设备和物联网中光电探测器和气体传感器应用的两大要求。自供电传感器（尤其是光伏气体传感器）可以解决这些问题。在这项研究中，我们首次报道了 SiO/Si 衬底上的 2D TMD（NbSe-MoS 混合材料）来制造光伏自供电气体传感器。该气体传感器通过 NbSe-MoS 纳米结构的光伏效应进行操作，该纳米结构采用液相剥离工艺制备。最初，我们发现该混合材料在光照下表现出光伏特性，电路电流为 0.25 µA，电路电压为 34 mV。然后将 NbSe-MoS 纳米结构特性用于不同浓度的 NH 气体传感，并检测从低浓度（10 ppm 时为 8.8%）到高浓度（500 ppm 时为 28.8%）的气体传感响应。内置电场发生在 NbSe-MoS 结之间，最终作为 NbSe-MoS 气体传感的驱动力，无需外部偏置电压。气体分子在其表面的物理吸附促进了电荷转移机制，从而改善了气体传感器的响应。 NbSe-MoS 异质结构的综合结果可以为下一代气体传感设备的制造铺平道路。