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Managing Interfacial Defects and Charge‐Carriers Dynamics by a Cesium‐Doped SnO2 for Air Stable Perovskite Solar Cells
Small ( IF 13.3 ) Pub Date : 2024-05-11 , DOI: 10.1002/smll.202402268
Muhammad Adnan 1 , Wonjong Lee 1 , Zobia Irshad 1 , Sunkyu Kim 1 , Siwon Yun 1 , Hyeji Han 1 , Hyo Sik Chang 1 , Jongchul Lim 1
Affiliation  

A high‐quality nanostructured tin oxide (SnO2) has garnered massive attention as an electron transport layer (ETL) for efficient perovskite solar cells (PSCs). SnO2 is considered the most effective alternative to titanium oxide (TiO2) as ETL because of its low‐temperature processing and promising optical and electrical characteristics. However, some essential modifications are still required to further improve the intrinsic characteristics of SnO2, such as mismatch band alignments, charge extraction, transportation, conductivity, and interfacial recombination losses. Herein, an inorganic‐based cesium (Cs) dopant is used to modify the SnO2 ETL and to investigate the impact of Cs‐dopant in curing interfacial defects, charge‐carrier dynamics, and improving the optoelectronic characteristics of PSCs. The incorporation of Cs contents efficiently improves the perovskite film quality by enhancing the transparency, crystallinity, grain size, and light absorption and reduces the defect states and trap densities, resulting in an improved power conversion efficiency (PCE) of ≈22.1% with Cs:SnO2 ETL, in‐contrast to pristine SnO2‐based PSCs (20.23%). Moreover, the Cs‐modified SnO2‐based PSCs exhibit remarkable environmental stability in a relatively higher relative humidity environment (>65%) and without encapsulation. Therefore, this work suggests that Cs‐doped SnO2 is a highly favorable electron extraction material for preparing highly efficient and air‐stable planar PSCs.

中文翻译:

通过掺铯 SnO2 管理空气稳定钙钛矿太阳能电池的界面缺陷和载流子动力学

高品质纳米结构氧化锡(SnO2)作为高效钙钛矿太阳能电池(PSC)的电子传输层(ETL)引起了广泛关注。氧化亚锡2被认为是氧化钛(TiO2)作为 ETL,因为其低温处理和有前途的光学和电学特性。然而,仍需要进行一些必要的修改以进一步改善 SnO 的固有特性2,例如失配能带排列、电荷提取、传输、电导率和界面复合损失。本文中,使用无机铯 (Cs) 掺杂剂来改性 SnO2ETL 并研究 Cs 掺杂剂对消除界面缺陷、载流子动力学和改善 PSC 光电特性的影响。 Cs含量的掺入通过提高透明度、结晶度、晶粒尺寸和光吸收来有效提高钙钛矿薄膜的质量,并减少缺陷态和陷阱密度,从而使Cs的功率转换效率(PCE)提高约22.1%:氧化亚锡2ETL,与原始 SnO 相比2‐基于 PSC(20.23%)。此外,Cs修饰的SnO2基于PSCs在相对较高的相对湿度环境(>65%)且没有封装的情况下表现出显着的环境稳定性。因此,这项工作表明 Cs 掺杂 SnO2是一种非常有利于制备高效且空气稳定的平面PSC的电子提取材料。
更新日期:2024-05-11
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