The increasing energy demand in information technologies requires novel low‐power procedures to store and process data. Magnetic materials, central to these technologies, are usually controlled through magnetic fields or spin‐polarized currents that are prone to the Joule heating effect. Magneto‐ionics is a unique energy‐efficient strategy to control magnetism that can induce large non‐volatile modulation of magnetization, coercivity and other properties through voltage‐driven ionic motion. Recent studies have shown promising magneto‐ionic effects using nitrogen ions. However, either liquid electrolytes or prior annealing procedures are necessary to induce the desired N‐ion motion. In this work, magneto‐ionic effects are voltage‐triggered at room temperature in solid state systems of CoxMn1‐xN films, without the need of thermal annealing. Upon gating, a rearrangement of nitrogen ions in the layers is observed, leading to changes in the co‐existing ferromagnetic and antiferromagnetic phases, which result in substantial increase of magnetization at room temperature and modulation of the exchange bias effect at low temperatures. A detailed correlation between the structural and magnetic evolution of the system upon voltage actuation is provided. The obtained results offer promising new avenues for the utilization of nitride compounds in energy‐efficient spintronic and other memory devices.

中文翻译：

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CoxMn1−xN 薄膜中的室温固态氮基磁离子学

信息技术中不断增长的能源需求需要新颖的低功耗程序来存储和处理数据。磁性材料是这些技术的核心，通常通过易于产生焦耳热效应的磁场或自旋极化电流进行控制。磁离子学是一种独特的控制磁性的节能策略，可以通过电压驱动的离子运动诱导磁化强度、矫顽力和其他特性的大的非易失性调制。最近的研究表明使用氮离子的磁离子效应很有前景。然而，液体电解质或预先的退火程序对于诱导所需的 N 离子运动是必要的。在这项工作中，磁离子效应是在室温下在 Co 固态系统中通过电压触发的。X锰1‐XN片，无需热退火。选通后，观察到层中氮离子的重新排列，导致共存的铁磁相和反铁磁相发生变化，从而导致室温下磁化强度的大幅增加和低温下交换偏置效应的调制。提供了电压驱动时系统的结构和磁演化之间的详细相关性。所获得的结果为氮化物化合物在节能自旋电子和其他存储器件中的利用提供了有希望的新途径。