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Electronic Properties of W’ Twin Walls in Ferroelastic BiVO4
Advanced Functional Materials ( IF 19.0 ) Pub Date : 2024-05-13 , DOI: 10.1002/adfm.202400420
Yuwen Xu 1 , Pankaj Sharma 2, 3, 4 , Haotian Wen 1 , Dawei Zhang 1, 2 , Charlie Kong 5 , Zewu Yan 6 , Shery L. Y. Chang 1, 5 , Jan Seidel 1, 2
Affiliation  

Topological defects in ferroic materials can exhibit intrinsic properties that differ from the bulk. Here, structural and electronic variations of non‐prominent (W’) ferroelastic twin domain walls are investigated in BiVO4, a widely investigated photocatalytic material. Using aberration‐corrected scanning transmission electron microscopy (STEM), a kink configuration of the sharp ferroelastic twin wall with an altered electronic structure is revealed. Nanoscale conductivity measurements by conductive atomic force microscopy (c‐AFM) show higher conductivity at twin walls compared to non‐conductive bulk domains. Electronic structure investigation by electron energy loss spectroscopy (EELS) shows a higher density of oxygen vacancies and possible polaron accumulation at the wall. These findings reveal the electronic properties of BiVO4 domain walls, which are interesting for nanoscale‐engineered catalytic concepts of BiVO4 and materials design for photochemistry‐relevant applications.

中文翻译:

铁弹性 BiVO4 中 W' 双壁的电子特性

铁质材料中的拓扑缺陷可能表现出与本体不同的固有特性。在这里,研究了 BiVO 中非突出 (W') 铁弹性孪晶畴壁的结构和电子变化4,一种广泛研究的光催化材料。使用像差校正扫描透射电子显微镜(STEM),揭示了具有改变的电子结构的尖锐铁弹性双壁的扭结配置。通过导电原子力显微镜(c-AFM)进行的纳米级电导率测量显示,与非导电体域相比,双壁的电导率更高。通过电子能量损失光谱(EELS)进行的电子结构研究显示,氧空位密度较高,并且壁上可能存在极化子积累。这些发现揭示了 BiVO 的电子特性4畴壁,这对于 BiVO 的纳米级工程催化概念很有趣4以及光化学相关应用的材料设计。
更新日期:2024-05-13
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