A new misfit layered compound with the stoichiometry (EuS)_1+δ(NbSe₂)₂ (δ ≈ 0.13) has been successfully synthesized. High-resolution transmission electron microscopy and powder X-ray diffraction confirm the misfit structure with (EuS)–(EuS) spacing of 18.30(1) Å. Magnetization, electrical resistivity, heat capacity, and thermal transport measurements show that the material is a heavily doped semiconductor or poor metal with a low thermal conductivity of ∼1 W/m K and an antiferromagnetic ordering transition at T_N = 4.7 K. In contrast to the parent materials, the misfit is neither ferromagnetic nor superconducting down to T = 0.4 K. We find evidence of a field-driven transition to a ferromagnetic state due to reorientation of ferromagnetic EuS layers at μ_oH = 0.5 T at T = 2 K.

中文翻译：

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错配层状化合物(EuS)1.13(NbSe2)2的合成及物理性质


成功合成了化学计量（EuS） _1+δ （NbSe ₂ ） ₂ （δ ≈ 0.13）的新型错配层状化合物。高分辨率透射电子显微镜和粉末 X 射线衍射证实了 (EuS)-(EuS) 间距为 18.30(1) Å 的错配结构。磁化强度、电阻率、热容量和热传输测量结果表明，该材料是重掺杂半导体或贫金属，导热系数低至 ∼1 W/m K，并在 T _N 处发生反铁磁有序转变。 = 4.7 K。与母体材料相反，在 T = 0.4 K 时，失配既不是铁磁也不是超导。我们发现了由于铁磁 EuS 层在 μ _o H = 0.5 T（T = 2 K）。