2D materials have garnered significant attention owing to their substantial potential across various applications, including thin‐film electronics, optoelectronics, and sensor devices, particularly, the synthesis and deposition methods of the 2D materials are crucial. In this study, thin films of tin disulfide (SnS2), a layer‐structured metal dichalcogenide, are deposited on an indium tin oxide (ITO) glass substrate through a spin‐coating process to prepare a sandwich‐structured resistive switching (RS) device (ITO/SnS2/ITO) by following magnetron sputtering of ITO as top electrode. Notably, the solution‐phased spin‐coating deposition method provides an efficient approach to enhance device performance through ion doping. By incorporating calcium ions (Ca2+), the devices exhibit the potential to achieve outstanding resistive switching performance and synapse functionality. With a DC sweep, an on/off resistance ratio exceeding 100 can be sustained without degradation for up to 5000 cycles. Furthermore, the devices exhibit diverse synaptic functions, including short‐term and long‐term plasticity (STP, LTP) in both potentiation and depression processes, spike‐timing‐dependent plasticity (STDP), and paired‐pulse facilitation (PPF). The transition in electrical resistance and synaptic function can be attributed to the migration of doped Ca2+ along the grain boundary and interlayer space of layer‐structured SnS2 films.

中文翻译：

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用于模拟突触的旋涂沉积 SnS2 薄膜忆阻器

二维材料因其在薄膜电子、光电子和传感器设备等各种应用中的巨大潜力而​​受到广泛关注，特别是二维材料的合成和沉积方法至关重要。在这项研究中，二硫化锡（SnS2），通过旋涂工艺将层状结构的金属二硫属化物沉积在氧化铟锡（ITO）玻璃基板上，制备三明治结构的电阻开关（RS）器件（ITO/SnS2/ITO）通过磁控溅射 ITO 作为顶部电极。值得注意的是，溶液相旋涂沉积方法提供了一种通过离子掺杂增强器件性能的有效方法。通过掺入钙离子（Ca2+），这些器件展现出实现出色的电阻开关性能和突触功能的潜力。通过直流扫描，超过 100 的开/关电阻比可以维持长达 5000 个周期而不会降低。此外，这些装置表现出多种突触功能，包括增强和抑制过程中的短期和长期可塑性（STP、LTP）、尖峰时序依赖性可塑性（STDP）和配对脉冲促进（PPF）。电阻和突触功能的转变可归因于掺杂 Ca 的迁移2+沿着层状结构 SnS 的晶界和层间空间2电影。