当前位置: X-MOL 学术Chem. Eng. J. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
InGaN/GaN multi-quantum well nanowires: Enhanced trace-level NO2 detection for environmental and breath analysis
Chemical Engineering Journal ( IF 15.1 ) Pub Date : 2024-05-11 , DOI: 10.1016/j.cej.2024.152074
Arunkumar Shanmugasundaram , Muhammad Ali Johar , Changung Paeng , Yun-Jin Jeong , Ameer Abdullah , Jongsung Park , Sang-Wan Ryu , Changyong Yim , Dong-Weon Lee

The World Health Organization highlights nitrogen dioxide (NO) as a key atmospheric pollutant impacting air quality and human health. To date, several sensors have been proposed for NO detection and disease monitoring, but their effectiveness is limited because of low sensitivity and high operational temperatures. Herein, we propose a selective and sensitive NO sensor based on indium gallium nitride/gallium nitride multiple quantum wells (InGaN/GaN-MQWs). We explored different InGaN/GaN-MQWs configurations (InGaN/GaN-MQW, InGaN/GaN-MQW, InGaN/GaN-MQW), developed through metal–organic chemical vapor deposition (MOCVD), to analyze their impact on gas sensing performance. Our findings reveal that the InGaN/GaN-MQW sensor at 150 °C exhibits a response 4.0, 3.1, and 1.65 times greater than GaN-NWs, InGaN/GaN-MQW, and InGaN/GaN-MQW sensors, respectively. The limit of detection (LOD) for the InGaN/GaN-MQW sensor is 3 parts per billion (ppb), significantly lower than the NO threshold value of 53 ppb. Under ultraviolet (UV) light, the response of InGaN/GaN-MQW is 5.51-fold, 4.18-fold, and 1.82-fold higher than that of the GaN-NWs, InGaN/GaN-MQW, and InGaN/GaN-MQW sensors, respectively. Importantly, our hybrid nanocomposite-based electronic nose (e-nose) sensor arrays could distinguish between healthy and simulated unhealthy breaths with high accuracy, promising a new era of efficient, non-invasive disease detection through breath analysis.

中文翻译:


InGaN/GaN 多量子阱纳米线:增强痕量级 NO2 检测,用于环境和呼吸分析



世界卫生组织强调二氧化氮 (NO) 是影响空气质量和人类健康的主要大气污染物。迄今为止,已经提出了几种用于 NO 检测和疾病监测的传感器,但由于灵敏度低和工作温度高,其有效性受到限制。在此,我们提出了一种基于氮化铟镓/氮化镓多量子阱(InGaN/GaN-MQW)的选择性、灵敏的NO传感器。我们探索了通过金属有机化学气相沉积 (MOCVD) 开发的不同 InGaN/GaN-MQW 配置(InGaN/GaN-MQW、InGaN/GaN-MQW、InGaN/GaN-MQW),以分析它们对气体传感性能的影响。我们的研究结果表明,InGaN/GaN-MQW 传感器在 150 °C 时的响应分别是 GaN-NW、InGaN/GaN-MQW 和 InGaN/GaN-MQW 传感器的 4.0、3.1 和 1.65 倍。 InGaN/GaN-MQW 传感器的检测限 (LOD) 为十亿分之 3 (ppb),明显低于 NO 阈值 53 ppb。在紫外 (UV) 光下,InGaN/GaN-MQW 的响应分别是 GaN-NW、InGaN/GaN-MQW 和 InGaN/GaN-MQW 传感器的 5.51 倍、4.18 倍和 1.82 倍, 分别。重要的是,我们的基于混合纳米复合材料的电子鼻(e-nose)传感器阵列可以高精度地区分健康和模拟的不健康呼吸,开创了通过呼吸分析进行高效、非侵入性疾病检测的新时代。
更新日期:2024-05-11
down
wechat
bug