Metal sulfides have attracted extensive attention due to their excellent electrochemical performance. However, issues such as poor conductivity and severe volume expansion during charge and discharge processes affect the applications of sulfides as electrode materials. Here, a combination of coprecipitation and high-temperature sulfidation methods are employed to synthesize a ZnS–SnS₂ composite with a hollow cubic structure, which is further composited with reduced graphene oxide (RGO) to form ZnS–SnS₂ hollow cubic boxes encapsulated in a conductive framework of reduced graphene oxide (RGO) (denoted as ZnS–SnS₂@RGO) for electrode materials. The hollow structure effectively alleviates the pulverization of ZnS–SnS₂@RGO caused by volume expansion during charge and discharge processes. The heterogeneous structure formed by ZnS and SnS₂ effectively reduces the electron transfer resistance of the material. The use of RGO wrapping enhances the conductivity of the ZnS–SnS₂ hollow cubic boxes, and RGO's dispersion effect on the ZnS–SnS₂ cubes improves particle agglomeration, further mitigating volume expansion of the material. These results indicate the outstanding electrochemical performance of heterostructural ZnS–SnS₂ hollow cubic electrodes encapsulated with reduced graphene oxide as a conductive framework. The fabrication process provides a novel approach for addressing volume expansion and poor conductivity issues in other pseudocapacitive materials.

中文翻译：

---

还原氧化石墨烯包裹的ZnS–SnS2异质结双金属空心立方盒作为高倍率和长寿命超级电容器阳极材料


金属硫化物因其优异的电化学性能而受到广泛关注。然而，导电性差、充放电过程中体积膨胀严重等问题影响了硫化物作为电极材料的应用。本文采用共沉淀和高温硫化相结合的方法合成了具有空心立方结构的 ZnS-SnS ₂ 复合材料，并进一步与还原氧化石墨烯（RGO）复合形成 ZnS-SnS ₂ 封装在还原氧化石墨烯 (RGO)（表示为 ZnS–SnS ₂ @RGO）导电框架中的空心立方体，用于电极材料。中空结构有效缓解了充放电过程中体积膨胀引起的ZnS-SnS ₂ @RGO的粉化。 ZnS和SnS形成的异质结构 ₂ 有效降低了材料的电子传输电阻。 RGO包裹的使用增强了ZnS–SnS ₂ 空心立方体的电导率，RGO对ZnS–SnS ₂ 立方体的分散作用改善了颗粒团聚，进一步减轻了ZnS–SnS ₂ 立方体的体积膨胀。材料。这些结果表明，以还原氧化石墨烯作为导电框架封装的异质结构 ZnS-SnS ₂ 空心立方电极具有出色的电化学性能。该制造工艺为解决其他赝电容材料中的体积膨胀和导电性差问题提供了一种新颖的方法。