The pursuit of high-performance electronic devices has driven the research focus toward 2D semiconductors with high electron mobility and suitable band gaps. Previous studies have demonstrated that quasi-2D Bi₂O₂Se (BOSe) has remarkable physical properties and is a promising candidate for further exploration. Building upon this foundation, the present work introduces a novel concept for achieving nonvolatile and reversible control of BOSe’s electronic properties. The approach involves the epitaxial integration of a ferroelectric PbZr_0.2Ti_0.8O₃ (PZT) layer to modify BOSe’s band alignment. Within the BOSe/PZT heteroepitaxy, through two opposite ferroelectric polarization states of the PZT layer, we can tune the Fermi level in the BOSe layer. Consequently, this controlled modulation of the electronic structure provides a pathway to manipulate the electrical properties of the BOSe layer and the corresponding devices.

中文翻译：

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Bi2O2Se/Pb(Zr,Ti)O3 异质外延的非易失性调制


对高性能电子器件的追求推动了研究重点转向具有高电子迁移率和合适带隙的二维半导体。先前的研究表明，准二维Bi ₂ O ₂ Se (BOSe) 具有显着的物理性质，是进一步探索的有希望的候选者。在此基础上，本工作引入了一种新概念，用于实现 BOSe 电子特性的非易失性和可逆控制。该方法涉及铁电 PbZr _0.2 Ti _0.8 O ₃ (PZT) 层的外延集成，以修改 BOSe 的能带排列。在BOSe/PZT异质外延中，通过PZT层的两个相反的铁电极化状态，我们可以调节BOSe层中的费米能级。因此，电子结构的这种受控调制提供了操纵 BOSe 层和相应器件的电特性的途径。