Optoelectronic memristors are new multifunctional devices with both electrically tunable and light-tunable synaptic plasticity, attracting great attention as key promising devices for optoelectronic neuromorphic computing systems. At present, the conductance modulation in most optoelectronic memristors is conducted in a hybrid photoelectric mode, suffering some problems such as heat generation and control complexity. Here, an optoelectronic memristor based on the p⁺-Si/n-ZnO heterojunction is proposed where the conductance can be reversibly modulated in an all-optically controlled mode. The electron detrapping/trapping mechanism at the p⁺-Si/n-ZnO interface barrier region is presented to explain the light-induced conductance potentiation/depression behavior. Furthermore, some synaptic functions, including excitatory postsynaptic current (EPSC), inhibitory postsynaptic current (IPSC), and paired-pulse facilitation (PPF), are successfully mimicked in the p⁺-Si/n-ZnO heterojunction memristor, instructing its application potential for optoelectronic neuromorphic computing.

中文翻译：

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全光控制忆阻器中的光致电导增强和抑制


光电忆阻器是一种新型多功能器件，具有电可调和光可调突触可塑性，作为光电神经形态计算系统的关键有前途器件而引起了广泛关注。目前光电忆阻器中的电导调制大多采用混合光电方式进行，存在发热、控制复杂等问题。在此，提出了一种基于p ⁺ -Si/n-ZnO异质结的光电忆阻器，其电导可以在全光控模式下可逆调制。提出了 p ⁺ -Si/n-ZnO 界面势垒区的电子去俘获/俘获机制，以解释光诱导的电导增强/抑制行为。此外，一些突触功能，包括兴奋性突触后电流（EPSC）、抑制性突触后电流（IPSC）和配对脉冲促进（PPF），在p ⁺ -Si/n-ZnO异质结中成功模拟忆阻器，说明其在光电神经形态计算方面的应用潜力。