Precise control over polarity in field‐effect transistors (FETs) plays a pivotal role in the design and construction of complementary metal–oxide–semiconductor (CMOS) logic circuits. In particular, achieving such precise polarity control in 2D semiconductors is crucial for the further development of advanced electronic applications beyond unit devices. This paper presents a systematic investigation on the reversible transition of carrier types in a 2D MoTe2 semiconductor under different annealing atmospheres. Photoemission spectroscopy and density functional theory (DFT) calculations demonstrate that annealing processes in vacuum and in ambient air induce a modification in the density of states, resulting in alterations in p‐type or n‐type characteristics. These reversible changes are attributed to the physisorption and elimination of oxygen on the surface of MoTe2. Furthermore, it is found that the device geometry affects the polarity of the transistor. By strategically manipulating both the annealing conditions and the geometric configuration, the n‐ and p‐type unipolar characteristics of MoTe2 FETs are successfully modulated and ultimately demonstrating that the functionality of not only a complementary inverter with a high voltage gain of ≈20, but also more complex logic circuits of NAND and NOR gates.

中文翻译：

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用于互补逻辑门应用的 2D MoTe2 场效应晶体管中的可逆极性控制


场效应晶体管 (FET) 极性的精确控制在互补金属氧化物半导体 (CMOS) 逻辑电路的设计和构建中发挥着关键作用。特别是，在二维半导体中实现如此精确的极性控制对于单元器件之外的先进电子应用的进一步发展至关重要。本文对不同退火气氛下二维 MoTe2 半导体中载流子类型的可逆转变进行了系统研究。光电发射光谱和密度泛函理论 (DFT) 计算表明，真空和环境空气中的退火过程会引起态密度的改变，从而导致 p 型或 n 型特性的改变。这些可逆的变化归因于MoTe2表面氧的物理吸附和消除。此外，发现器件几何形状影响晶体管的极性。通过策略性地控制退火条件和几何配置，成功地调制了 MoTe2 FET 的 n 型和 p 型单极特性，并最终证明了不仅具有约 20 高电压增益的互补逆变器的功能，而且与非门和或非门的更复杂的逻辑电路。