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Rapid-thermal-process pre-treatment promoted precipitation towards strengthening hard magnetism of Sm2Co17-type magnets
Acta Materialia ( IF 9.4 ) Pub Date : 2024-05-09 , DOI: 10.1016/j.actamat.2024.119966
Xin Song , Wentao Jia , Yao Liu , Jian Li , Dan Huang , Xiaolian Liu , Lizhong Zhao , Xianglong Zhou , Yang Ren , Feng Liu , Tianyu Ma

Dislocations can act as heterogeneous nucleation sites but their annihilations upon heating sacrifice point defects nearby, weakening the driving force for precipitate nucleation. In order to keep a high density of dislocations and point defects together, here rapid-thermal-process (RTP) pre-treatment was carried out to promote the precipitate nucleation in SmCo-type permanent magnets that evolve gradual formation and dissociation of dislocations during concurrent precipitation and recrystallization. As exhibited in a model magnet SmCoFeCuZr (wt.%) with high-density dislocations at solution-treated state, the RTP pre-treatment can induce excess point defects owing to the migration of solute atoms towards equilibrium state and the quenching of point defects, and suppress the early-stage diffusion-controlled dissociation of dislocations. After whole-process isothermal aging and slow cooling, the RTP pre-treated magnet possesses much higher fraction of hexagonal SmCo (1:5H) nanoprecipitates than the non-pre-treated one, giving rise to effective enhancements in coercivity from 26.20 to 30.34 kOe and in knee-point field from 14.43 to 19.20 kOe. These findings add insight into controlling precipitation in dislocation-bearing supersaturated solid solutions, which are feasible for strengthening the Sm-Co-based magnets.

中文翻译:


快速热处理预处理促进析出以增强Sm2Co17型磁体的硬磁性



位错可以充当异质成核位点,但加热时位错的湮灭会牺牲附近的点缺陷,削弱析出物成核的驱动力。为了保持高密度的位错和点缺陷在一起,这里进行了快速热处理(RTP)预处理,以促进 SmCo 型永磁体中沉淀物的成核,从而在同时发生位错的过程中逐渐形成和解离。沉淀和重结晶。正如在固溶处理状态下具有高密度位错的模型磁体 SmCoFeCuZr (wt.%) 所示,由于溶质原子向平衡态迁移以及点缺陷的淬灭,RTP 预处理会引起过量的点缺陷,并抑制早期扩散控制的位错解离。经过全过程等温时效和缓慢冷却后,RTP预处理磁体比未预处理磁体具有更高的六方SmCo(1:5H)纳米沉淀物含量,矫顽力有效提高,从26.​​20 kOe提高到30.34 kOe膝点范围为 14.43 至 19.20 kOe。这些发现增加了控制带位错过饱和固溶体中沉淀的见解,这对于强化钐钴基磁体是可行的。
更新日期:2024-05-09
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