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Influence of the electron density on the giant negative magnetoresistance in two-dimensional electron gases

L. Bockhorn, D. Schuh, C. Reichl, W. Wegscheider, and R. J. Haug
Phys. Rev. B 109, 205416 – Published 13 May 2024

Abstract

In situ variation of the electron density via a metallic gate can control the disorder potentials in two-dimensional electron gases (2DEGs). This also influences the negative magnetoresistance at low magnetic fields, which is commonly observed in ultrahigh mobility 2DEGs. We investigate the temperature-dependent giant negative magnetoresistance (GNMR) as a function of the electron density for several temperatures and currents. Thereby, we find that the GNMR behavior depends decisively on the electron density. This observation is attributed to a changed disorder potential with electron density. In the case of higher electron densities, a nonlinear current dependency of the GNMR is observed, which could be described within the hydrodynamic regime.

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  • Received 22 September 2023
  • Revised 8 February 2024
  • Accepted 19 April 2024

DOI:https://doi.org/10.1103/PhysRevB.109.205416

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

L. Bockhorn1,*, D. Schuh2, C. Reichl3, W. Wegscheider3, and R. J. Haug1

  • 1Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover, Germany
  • 2Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93053 Regensburg, Germany
  • 3Laboratorium für Festkörperphysik, ETH Zürich, 8093 Zürich, Switzerland

  • *bockhorn@nano.uni-hannover.de

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Vol. 109, Iss. 20 — 15 May 2024

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