Two-dimensional semiconductors are an attractive material for making thin-film transistors due to their scalability, transferability, atomic thickness and relatively high carrier mobility. There is, however, a gap in performance between single-device demonstrations, which typically use single-crystalline two-dimensional films, and devices that can be integrated on a large scale using industrial methods. Here we report the 200-mm-wafer-scale integration of polycrystalline molybdenum disulfide (MoS₂) field-effect transistors. Our processes are compatible with industry, with processing performed in a commercial 200 mm fabrication facility with a yield of over 99.9%. We find that the metal–semiconductor junction in polycrystalline MoS₂ is fundamentally different from its single-crystalline counterpart, and therefore, we redesign the process flow to nearly eliminate the Schottky barrier height at the metal–MoS₂ contact. The resulting MoS₂ field-effect transistors exhibit mobilities of 21 cm² V⁻¹ s⁻¹, contact resistances of 3.8 kΩ µm and on-current densities of 120 µA µm⁻¹, which are similar to those achieved with single-crystalline flakes.

二维半导体因其可扩展性、可转移性、原子厚度和相对较高的载流子迁移率而成为制造薄膜晶体管的有吸引力的材料。然而，通常使用单晶二维薄膜的单器件演示与可以使用工业方法大规模集成的器件之间存在性能差距。在此，我们报告了 200 毫米晶圆级集成的多晶二硫化钼 (MoS ₂ ) 场效应晶体管。我们的工艺与工业兼容，在商业 200 毫米制造设施中进行加工，成品率超过 99.9%。我们发现多晶MoS ₂中的金属-半导体结与其单晶对应物有根本的不同，因此，我们重新设计了工艺流程以几乎消除金属-MoS ₂接触处的肖特基势垒高度。所得MoS ₂场效应晶体管表现出21 cm ²  V ^-1  s ^{-1的迁移率、3.8 kΩ µm 的接触电阻和120 µA µm -1}的导通电流密度，这与单晶薄片所实现的相似。 。