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Ionic control of magnetism in all-solid-state CoOx/yttria-stabilized zirconia heterostructures Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 Zheng Ma, Zhengwei Tan, Alberto Quintana, Irena Spasojevic, Nicolau López-Pintó, Florencio Sánchez, Ignasi Fina, Javier Herrero-Martín, Enric Menéndez, Jordi Sort
Magneto-ionic gating, a procedure that enables the modulation of materials' magnetic properties by voltage-driven ion motion, offers alternative perspectives for emerging low-power magnetic storage and spintronic applications. Most previous studies in all-solid-state magneto-ionic systems have focused on the control of interfacial magnetism of ultrathin (i.e., 1–3 nm) magnetic films, taking advantage
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Efficient magnetization switching induced by spin–orbit torque in perpendicularly magnetized Mn1+xCo2−xAl Heusler alloys Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 Hongrui Qin, Xupeng Zhao, Rongkun Han, Hongli Sun, Zhicheng Xie, Dahai Wei, Jianhua Zhao
Perpendicularly magnetized Co-based Heusler alloys are promising candidates in high-performance spintronic devices. However, there is a contradiction between thermal stability and damping-like spin–orbit torque (SOT) efficiency in Co-based Heusler alloys with interface-induced perpendicular magnetic anisotropy (PMA). Here, we present epitaxially grown perpendicularly magnetized Mn1+xCo2−xAl (MCA) Heusler
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Giant polarization in tetragonal-like BiFeO3 film via (Ba,Ca)TiO3 doping Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 Teng Li, Beibei Zhu, Hao Zhuo, Shudong Hu, Yiwen Liu, Botao Shao, Ke Wang, Dongsheng Song, Liqiang Xu, Feng Chen
BiFeO3 is a multiferroic material, its tetragonality (T) phase usually exhibits large tetragonality (c/a ratio) and strong ferroelectricity. Unlike the commonly used method of strain engineering via substrate, here we present a general and practical approach for obtaining T-like phase BiFeO3 films through (Ba,Ca)TiO3 doping (BF-BCT). The BF-BCT film coherently grows on the La0.7Sr0.3MnO3/(La0.18Sr0
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Superconducting quantum memory with a suspended coaxial resonator Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 Lev Krayzman, Chan U Lei, Suhas Ganjam, James Teoh, Luigi Frunzio, Robert J. Schoelkopf
A promising way to store quantum information is by encoding it in the bosonic excitations of microwave resonators. This provides for long coherence times, low dephasing rates, as well as a hardware-efficient approach to quantum error correction. There are two main methods used to make superconducting microwave resonators: by traditionally machining them out of bulk material and by lithographically
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Edge passivation: Considerable improvement in photovoltaic performance of perovskite/silicon tandem solar cells Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 Bingbing Chen, Mengnan Cui, Xinru Wang, Hao Meng, Yuhua Bai, Wenheng Li, Xiao Wang, Xuning Zhang, Jianhui Chen
Edge recombination is considered hard to avoid entirely in silicon (Si) solar cells as well as Si-base solar devices, hindering their future commercialization. However, such an important issue in perovskite/silicon (PK/Si) tandem solar cells has not attracted much attention. Herein, a low-temperature, non-vacuum liquid-based edge passivation strategy (LEPS) to improve the power conversion efficiency
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Collective control of a vortex array in a ferroelectric ultrathin film Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 Bo Ruan, Pengcheng Xiong, Qingyuan Liu, Ye Ji, Shuai Yuan
Recently, the observation of ferroelectric vortex arrays has triggered the investigation of topological domain structures and their characteristics. Vortices are typical topological domain structures with chirality in nanoscale ferroelectric materials. The chirality of a single vortex in a nanodot can be easily manipulated, but the collective control of a vortex array is exceptionally difficult and
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High heat transfer plant-inspired neural network structure controlled by variable magnetic field Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 Dachao Li, Taisen Shi, Jianhua Li, Chunling Li, Zhifeng Shi, Tongkai Gu
Efficient heat dissipation and thermal protection present urgent challenges in high-power integrated circuits (ICs). Although applying a coating of highly thermally conductive materials on the surface of ICs is anticipated to mitigate heat concentration issues, ensuring thermal protection for adjacent devices continues to pose a challenge. Inspired by the microstructure of unidirectional nutrient transport
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Investigation on self-rectifying properties of Pt/HfO2/Ti with rivet-like structure based on ALD conformal technology Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 Kexiang Wang, Jie Lu, Zeyang Xiang, Ranping Li, Zixuan Wang, Huilin Jin, Ran Jiang
This work explores an architecture for nonvolatile resistive random-access memory (RRAM) systems. The study proposes a self-rectifying RRAM device utilizing a two-terminal 1R selector that harmonizes the gate control efficacy of transistors with the inherent simplicity of diode structures. A rivet-like HfO2-based RRAM array is meticulously constructed through atomic layer deposition (ALD), aiming to
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Broadband noise-like pulses in fiber laser based on a filter Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 Yichang Meng, Oumaima Ougrige, Florent Bessin, Mohamed Salhi, François Sanchez
We report on the generation of broadband noise-like pulses in an Er:Yb doped fiber laser with a tunable bandpass filter in the cavity. Benefit from the filter enhanced spectrum at shorter wavelengths and Raman effect assisted spectrum at longer wavelengths, an excellent flat spectrum with a 3 dB spectral width of 130.2 nm is obtained. This is different from previous traditional methods to achieve broadband
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High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 John Niroula, Qingyun Xie, Nitul S. Rajput, Patrick K. Darmawi-Iskandar, Sheikh Ifatur Rahman, Shisong Luo, Rafid Hassan Palash, Bejoy Sikder, Mengyang Yuan, Pradyot Yadav, Gillian K. Micale, Nadim Chowdhury, Yuji Zhao, Siddharth Rajan, Tomás Palacios
This Letter reports the stability of regrown and alloyed Ohmic contacts to AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) for high temperature applications up to 500 °C. Transfer length method (TLM) measurements from 25 to 500 °C in air show that the regrown contacts appear to be stable up to 500 °C during short term (approximately 1 h) testing, while alloyed contacts appear to decrease
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Fabrication of surface nanoscale axial photonics structures with electric arc discharge Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 Wenxin Liu, Xuewen Shu
The fabrication of surface nanoscale axial photonics (SNAP) microresonators, utilizing the approach of electric arc discharge (EAD), is accomplished, achieving a precision at the angstrom level. This paper thoroughly investigates the effects that discharge intensity and discharge duration have on SNAP microresonators, respectively, through the manipulation of relevant discharge parameters. The results
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Magnetic vortex control with current-induced axial magnetization in centrosymmetric Weyl materials Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 J. G. Yang, Yaroslav Tserkovnyak, D. A. Pesin
We consider magnetic Weyl metals as a platform to achieve current control of magnetization textures with transport currents utilizing their underlying band geometry. We show that the transport current in a Weyl semimetal produces an axial magnetization due to orbital magnetic moments of the Weyl electrons. The associated axial magnetization can generate a torque acting on the localized magnetic moments
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Spectroscopic investigations on trivalent ruthenium ions in ruthenium perovskite oxide thin films Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 S. Nakata, R. Takahashi, R. Matsumoto, L.-F. Zhang, H. Sumida, S. Suzuki, T. C. Fujita, M. Kawasaki, H. Wadati
The d5 electron configurations under the crystal field, spin–orbit coupling, and Coulomb interaction give rise to a plethora of profound ground states. Ruthenium perovskite oxides exhibit a number of unconventional properties yet the Ru4+ state (4d4) is usually stable in these materials. In this regard, Ru3+ ions in perovskite materials are expected to be a mesmerizing playground of 4d5 electron configurations
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Combining computational screening and machine learning to explore MOFs and COFs for methane purification Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 Hasan Can Gulbalkan, Alper Uzun, Seda Keskin
Metal-organic frameworks (MOFs) and covalent organic frameworks (COFs) have great potential to be used as porous adsorbents and membranes to achieve high-performance methane purification. Although the continuous increase in the number and diversity of MOFs and COFs is a great opportunity for the discovery of novel adsorbents and membranes with superior performances, evaluating such a vast number of
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Increased thermal conductivity and decreased electron–phonon coupling factor of the aluminum scandium intermetallic phase (Al3Sc) compared to solid solutions Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 Daniel Hirt, Md. Rafiqul Islam, Md. Shafkat Bin Hoque, William Hutchins, Sara Makarem, Megan K. Lenox, William T. Riffe, Jon F. Ihlefeld, Ethan A. Scott, Giovanni Esteves, Patrick E. Hopkins
Aluminum scandium alloys and their intermetallic phases have arisen as potential candidates for the next generation of electrical interconnects. In this work, we measure the in-plane thermal conductivity and electron–phonon coupling factor of aluminum scandium alloy thin films deposited at different temperatures, where the temperature is used to control the grain size and volume fraction of the Al3Sc
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Robust chiral spin transport in the antiferromagnetic iron oxide/heavy metal bilayers Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 T. Z. Zhang, K. K. Meng, Y. Wu, J. K. Chen, X. G. Xu, Y. Jiang
We have observed robust chiral spin torques and non-reciprocal charge transport behaviors in the α-Fe2O3/Pt bilayers through a combination of magnetic field and current-dependent second longitudinal harmonic resistance measurements. The interfacial Dzyaloshinskii–Moriya interaction induced magnetic chirality has been predicted to account for the sign reversal characteristic of the second longitudinal
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Toward low-power-consumption source-gated phototransistor Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 Mingxu Wang, Fengjing Liu, Tieying Zhang, Guangcan Wang, Zixu Sa, Zeqi Zang, Dongqing Qi, Kepeng Song, Peng Cui, Zai-xing Yang
The power consumption is challenging the next-generation electronic and optoelectronic devices. In this Letter, the n-type source-gated transistor (SGT) enabled by CdS nanobelt is investigated in detail, demonstrating the expected low power consumption, along with impressive photodetection performance. The SGT is realized by deliberately introducing the Schottky barrier at the source of the staggered-electrode
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A high-robustness radial intensity-orientated mode decomposition with reliable noise elimination Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-15 Jianshuai Wang, Li Pei, Lin Xu, Kaihua Hu, Zhiqi Li, Han Gao
Mode decomposition (MD) provides profound evidence to reveal the internal modal transmission mechanism. However, the indelible noise has always been the main stubborn hindrance in practical MD. In the complex superposition case with a large number of modes, the traditional MD is not capable enough to distinguish the real modal intensity and the annoying noise, sustaining an unacceptable accuracy and
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Artificial synapses based on boron ions-modulated transistors for neuromorphic applications Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-14 Guangtan Miao, Qingliang Liu, Yepeng Shi, Ranran Ci, Guoxia Liu, Fukai Shan
The development of large-scale manufacturing and cost-saving artificial synaptic devices is of great significance for the realization of hardware neural networks. In this work, the In2O3 synaptic transistors with boron ion-doped ZrOx as the dielectric layer were fabricated by the solution process. The large counterclockwise hysteresis indicates that the nonvolatile memory capacity of the synaptic transistors
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Two-dimensional epitaxy of SnSe film on In2Se3 induced by intrinsic out-of-plane ferroelectricity Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-14 Keying Shou, Jinbo Shen, Haifei Wu, Guiling Chen, Rong Chen, Xiangyu Zu, Juncheng Ding, Yajie Sun, Jianxiao Si, Yun-Hao Lu, Wei-Dong Dou
Two-dimensional (2D) van der Waals heterostructures (vdWHs) received intensive interest due to their amazing physical properties and broad applications in fields such as ultrasensitive sensors, transistors, and solar cells. Although remarkable progresses were achieved for the synthesis of 2D vdWHs, great challenges still remain for the easy preparation of 2D vdWHs because of the weak interlayer coupling
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3D surface profilometry using neutral helium atoms Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-14 Aleksandar Radić, Sam M. Lambrick, Nick A. von Jeinsen, Andrew P. Jardine, David J. Ward
Three-dimensional mapping of surface structures is important in a wide range of biological, technological, healthcare, and research applications. Neutral helium atom beams have been established as a sensitive probe of topography and have already enabled structural information to be obtained from delicate samples where conventional probes would cause damage. Here, we empirically demonstrate, for the
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Recess-free thin-barrier AlGaN/GaN Schottky barrier diodes with ultra-low leakage current: Experiment and simulation study Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-14 Jianxun Dai, Huimin Yu, Huolin Huang, Taisen Ye, Yun Lei, Nan Sun, Dawei Li, Hao Zheng, Hui Huang, Yung C. Liang
In GaN Schottky barrier diodes (SBD), there is a trade-off between the turn-on voltage and the leakage current. In this study, recess-free 4 nm-thin-barrier AlGaN/GaN SBDs with minimal leakage current as well as excellent turn-on voltage homogeneity are developed, which enable better electrical control to pinch off the 2DEG channel under the anode region and avoids trap introduced in the barrier etching
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Anomalous superconductivity in Li/F modified two-dimensional molybdenene Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-14 Hongmei Xie, Zhijing Huang, Yinchang Zhao, Hao Huang, Geng Li, Zonglin Gu, Shuming Zeng
Dirac materials, due to their unique physical properties, hold vast prospects in both fundamental research and practical applications. Recently, the metallic Dirac material, molybdenene, has been synthesized. However, free-standing molybdenene is found to be dynamically unstable. We propose the use of F/Li to modify its structure and stabilize it. Based on density functional theory, density functional
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Suppression of spurious modes in lateral-excited bulk acoustic wave resonators using piston mode electrodes Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-14 Jieyu Liu, Wenjuan Liu, Zhiwei Wen, Xin Tong, Yan Liu, Yao Cai, Chengliang Sun
Lateral-excited bulk acoustic wave resonators (XBARs) have a large electromechanical coupling coefficient and low mechanical loss. However, XBARs have not yet been commercialized in 5G communications due to spurious modes, high TCF, and low-power handling. This paper presents a lateral-excited bulk acoustic wave resonator with piston mode electrodes named PLBAR. Compared to the conventional interdigital
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Magnetic evolution of Cr2Te3 epitaxially grown on graphene with post-growth annealing Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-14 Quentin Guillet, Hervé Boukari, Fadi Choueikani, Philippe Ohresser, Abdelkarim Ouerghi, Florie Mesple, Vincent T. Renard, Jean-François Jacquot, Denis Jalabert, Céline Vergnaud, Frédéric Bonell, Alain Marty, Matthieu Jamet
Two-dimensional and van der Waals ferromagnets are ideal platform to study low-dimensional magnetism and proximity effects in van der Waals heterostructures. Their ultimate two-dimensional character also offers the opportunity to easily adjust their magnetic properties using strain or electric fields. Among 2D ferromagnets, the Cr1+xTe2 compounds with x = 0–1 are very promising because their magnetic
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Non-Hermiticity in quantum nonlinear optics through symplectic transformations Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-14 Ross Wakefield, Anthony Laing, Yogesh N. Joglekar
Over the past decade, classical optical systems with gain or loss, modeled by non-Hermitian parity-time symmetric Hamiltonians, have been deeply investigated. Yet, their applicability to the quantum domain with number-resolved photonic states is fundamentally voided by quantum-limited amplifier noise. Here, we show that second-quantized Hermitian Hamiltonians on the Fock space give rise to non-Hermitian
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Quasi-Bessel surface acoustic wave for dynamic acoustic manipulation Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-14 Jingyao Shi, Chunqiu Zhang, Pengqi Li, Benxian Peng, Xinjia Li, Xiufang Liu, Wei Zhou
Acoustic manipulation using surface acoustic wave has aroused widespread interest in life sciences, biomedical, and bioanalytical chemistry. Acoustic manipulation for different applications requires different acoustic fields. Bessel beams are non-diffractive and re-constructable, bringing possibility and versatility of acoustic manipulation integrated on microfluidic chips. To date, there are a few
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Stable Ga2O3 soft x-ray detector with ultrahigh responsivity Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-13 Shunjie Yu, Yan Liu, Xiaohu Hou, Mengfan Ding, Yanni Zou, Yong Guan, Zhao Wu, Xiaolong Zhao, Qin Hu, Guangwei Xu, Shibing Long
Soft x-ray detectors play crucial roles in biology, chemistry, and lithography. Current soft x-ray detectors suffer from insufficient responsivity (R), excessively large cell area, and limited stability. Here, the β-Ga2O3 soft x-ray detector is constructed, and the effects of varying the sensitive layer thickness and voltage on the soft x-ray detection characteristics of the device are explored. Meanwhile
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Control of the oscillation frequency of a vortex cluster in the trapped polariton condensate Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-13 Kirill A. Sitnik, Ivan Gnusov, Mikhail Misko, Julian D. Töpfer, Sergey Alyatkin, Pavlos G. Lagoudakis
An optically trapped exciton–polariton condensate forms states corresponding to excited energy levels of the confining potential. Recently, it was shown that non-uniformity of the ring-shaped trapping potential leads to the simultaneous occupation of two split energy levels. This results in the formation of an oscillating vortex cluster with periodically changing signs of topological charges. Here
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Anomalous exchange bias behavior of NiFe/NiO bilayers induced by high-energy Xe+ ion irradiation Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-13 Yan Zhang, Bingsheng Li, Jun Li, Yong Wang, Yong Ren, Bo Dai
The alteration of the microstructure and magnetic performance of an exchange bias system, induced by ion irradiation, adversely affects the practical application of spintronic/storage devices in extreme environments. Here, we report systematically the correlation between static and dynamic magnetism and microstructure changes in NiFe/NiO exchange-biased bilayers after high-energy Xe+ ion irradiation
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Integrated thin-film lithium niobate electro-optic frequency comb for picosecond optical pulse train generation Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-13 Xuanhao Wang, Zhengkai Li, Junji Chen, Chenglin Shang, Zhiyao Zhang, Heping Li, Yong Liu, Cheng Zeng, Jinsong Xia
In recent years, high-performance thin-film lithium niobate (TFLN) electro-optic (EO) modulators boost the fast development of highly integrated, low loss, and large comb spacing EO frequency combs. Furthermore, ultra-short optical pulse trains (USOPTs) can be generated by the temporal domain compression of the optical frequency comb, which play an essential role in photonic sampling analog-to-digital
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Fabrication of planar halfmetallic ferromagnetic Josephson junctions with long range coupling Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-13 Junxiang Yao, Jan Aarts
Superconducting junctions with a ferromagnet as the weak link, where triplet correlations can transport supercurrents over a substantial distance, have been of long-standing interest. In this work, we study the triplet transport in planar La0.7Sr0.3MnO3 (LSMO) nanowire Josephson junctions with NbTi superconducting contacts. By meticulous ion etching with an artificial Pt hard mask, the NbTi/LSMO bilayer
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Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-13 Mengyu Zhang, Ruobing Wang, Xixi Zou, Sannian Song, Yun Bao, Liangcai Wu, Zhitang Song, Xilin Zhou
The Sb2Te3 phase change material shows a growth-dominated crystallization mechanism with fast phase transition but poor thermal stability of the amorphous state. This work investigated the effects of carbon doping on the thermal stability, microstructure, and electrical properties of the Sb2Te3 material. The 10-year data retention temperature of the material increased to ∼147.3 °C and the size of the
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Large magnetoresistance and nontrivial Fermi surface topology in quasi-one-dimensional Ta2PdSe6 Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-13 Yuanyuan Wang, Zheng Chen, Wenqian Tu, Xiangde Zhu, Wenjian Lu, Wei Ning, Mingliang Tian
We report the experimental investigation of quasi-one-dimensional (quasi-1D) Ta2PdSe6 single crystals by magnetotransport measurements under high magnetic fields up to 31 T. The crystals show large unsaturated magnetoresistance up to (1.8 × 105%) under 31 T at 1.6 K, accompanied by remarkable resistivity oscillations. The analysis of quantum oscillations reveals the existence of five Fermi pockets
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Arrays of nano-high-transition temperature superconductor quantum interference devices Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-10 Hao Li, Han Cai, Nirjhar Sarkar, Jay C. LeFebvre, Ethan Y. Cho, Shane A. Cybart
We report the fabrication and testing of arrays of nanoscale superconducting quantum interference devices (SQUIDs) directly written into a thin film of the high-transition temperature superconductor YBa2Cu-3O7−δ with a focused helium ion beam. We compare three array configurations with 400 nm by 400 nm nanoSQUIDs connected in series and parallel and a two-dimensional (2D) combination of both. Our electrical
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Enhanced torque efficiency in ferromagnetic multilayers by introducing naturally oxidized Cu Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-10 Kun Zheng, Cuimei Cao, Yingying Lu, Jing Meng, Junpeng Pan, Zhenjie Zhao, Yang Xu, Tian Shang, Qingfeng Zhan
Spin–orbit torque (SOT) in the heavy elements with a large spin–orbit coupling (SOC) has been frequently used to manipulate the magnetic states in spintronic devices. Recent theoretical works have predicted that the surface oxidized light elements with a negligible SOC can yield a sizable orbit torque (OT), which plays an important role in switching the magnetization. Here, we report anomalous-Hall-resistance
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Scale-invariant breathing oscillations and transition of the electron energization mechanism in magnetized discharges Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-09 Bocong Zheng, Yangyang Fu, Keliang Wang, Huihui Wang, Long Chen, Thomas Schuelke, Qi Hua Fan
Scale-invariant breathing oscillations are observed in similar magnetized discharges at different spatiotemporal scales via fully kinetic particle-in-cell simulations. With an increase in the similarity invariant B/p, i.e., the ratio of magnetic field to pressure, breathing oscillations are triggered, leading to an appreciable time-averaged potential fall outside the sheath. With the onset and development
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Enhanced thermoelectric performance of Cu2Se thin film derived from potential barrier scattering by incorporating SnSe nano-dispersions Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-09 Qing Wang, Zhiliang Li, Yuli Xue, Zhi Gao, Aiai Wang, Jianglong Wang, Shufang Wang
Incorporating nano-dispersions into thermoelectric (TE) materials is an effective approach to enhance the TE properties. Herein, the TE performance of Cu2Se thin film is significantly enhanced by incorporating highly dispersed SnSe nano-inclusions. The high power factor (PF, ∼11.0 μW cm−1 K−2, 310 K) at near room temperature is achieved mainly due to the enhanced energy filtering effect that originated
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Layer-dependence study of two-dimensional ferromagnets: Fe3GeTe2 and Fe5Ge2Te2 Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-09 Mohammed Alghamdi, Palani R. Jothi, Wei-Cheng Liao, Sinisa Coh, Xianqing Lin, Boniface P. T. Fokwa, Jing Shi
We have investigated the electrical transport properties of nanodevices fabricated from exfoliated flakes of two-dimensional metallic ferromagnets Fe3GeTe2 (FGT) and Fe5Ge2Te2 (FG2T) down to below three layers in thickness. The per-layer anomalous Hall conductivity even in thick FGT and FG2T devices is found to be much smaller than ∼e2h, the approximate value calculated for thick undoped crystals.
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The enhancement of low-temperature excitation of magnons via interlayer exchange coupling in perpendicularly magnetized [Co/Pd] multilayers Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-09 Julia Kasiuk, Wen-Bin Wu, Janusz Przewoźnik, Czesław Kapusta, Ivan Svito, Thanh Huong Nguyen, Khanh Tung Do, Dang Thanh Tran, Hung Manh Do, Johan Åkerman, Thi Ngoc Anh Nguyen
In this study, we analyze the correlation between magnetization and magnetoresistance of perpendicularly anisotropic [Co/Pd] multilayered films with different thicknesses of Pd layers tPd = 0.6–2.0 nm in a wide range of temperatures, T = 4–300 K. We revealed that electron scattering by magnons makes a significant contribution to the magnetoresistance of the multilayers regardless of the layer thickness
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Calculating the acoustic radiation force on spherical particles in a standing ultrasound wave field considering single and multiple scattering Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-09 Soheyl Noparast, Fernando Guevara Vasquez, Mathieu Francoeur, Bart Raeymaekers
Ultrasound directed self-assembly (DSA) utilizes the acoustic radiation force (ARF) associated with a standing ultrasound wave to organize particles dispersed in a fluid medium into specific patterns. The ARF is a superposition of the primary acoustic radiation force, which results from the incident standing ultrasound wave, and the acoustic interaction force, which originates from single and multiple
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Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-09 Nannan Liu, Chunlai Luo, Hongdi Wu, Yecheng Ding, Xubing Lu, Zhibo Yan, Jun-Ming Liu, Guoliang Yuan
Hf0.5Zr0.5O2 (HZO) thin films are promising for applications in ferroelectric memories. However, these materials often face challenges, such as polarization fluctuations (e.g., fatigue and wake-up) and electric break-down incidents during the “1/0” write/read cycles, hindering their industrial application. Herein, fatigue, wake-up, and electric break-down seriously depend on both the electric field
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The key role of methylenediammonium and tetrahydrotriazinium in the phase stability of FAPbI3 Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-09 Xiangxiang Feng, Yunhao Li, Mengqiu Long, Mengqiu Cai, Biao Liu, Junliang Yang
Formamidinium lead triiodide (FAPbI3) is the prime candidate for single-junction perovskite solar cells, despite the metastability of the phase. To improve its ambient-phase stability and produce world-record photoelectric conversion efficiencies, methylenediammonium (MDA) has been used as an additive in FAPbI3. However, the exact function and role of MDA are still uncertain. The MDA doping may exist
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Elucidating the formation mechanisms of the parasitic channel with buffer-free GaN/Si hetero-bonding structures Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-09 Hangning Shi, Jiaxin Ding, Qingcheng Qin, Ailun Yi, Jialiang Sun, Tadatomo Suga, Juemin Yi, Jianfeng Wang, Ke Xu, Min Zhou, Kai Huang, Tiangui You, Xin Ou
Driven by the increasing demand for 5G communication, GaN radio frequency (RF) device on Si technology has been flourishing attributable to the large size, low cost, and compatibility with complementary metal–oxide–semiconductor technology. However, a significant challenge is that a high-conductance parasitic channel forms at the interface between the III-N epitaxial layers and the Si substrate, leading
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Enhancement of electromechanical response in curved antiferroelectric AgNbO3 ceramics by flexoelectric effect Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-09 Liqiang Zhang, Xiang He, Zewei Zheng, Lu Wang, Chen Chen, Zhiguo Yi
AgNbO3 is a typical antiferroelectric ceramic with weak ferroelectricity at room temperature. Due to this feature, AgNbO3 has received a lot of attention in electromechanical applications, but most of these studies have focused on the doping of other elements in AgNbO3. In this study, curved AgNbO3 ceramics were fabricated using a gravity-driven annealing process, and the field-induced strains were
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Superconductivity with a high upper critical field in an equiatomic high-entropy alloy Sc–V–Ti–Hf–Nb Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-09 S. Jangid, P. K. Meena, R. K. Kushwaha, S. Srivastava, P. Manna, P. Mishra, S. Sharma, R. P. Singh
High-entropy alloy (HEA) superconductors have attracted significant attention due to their exceptional low-temperature mechanical and superconducting properties. We report the synthesis and thorough characterization of an equiatomic HEA superconductor with the composition Sc0.20V0.20Ti0.20Hf0.20Nb0.20, crystallizing in a body-centered cubic crystal structure (Im3m¯). Our investigation, using magnetization
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Half-metal Mn2GeI2 monolayer with high Curie temperature and large perpendicular magnetic anisotropy Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-09 Juncheng Luo, Xi Zhang, Mu Lan, Gang Xiang
Two-dimensional (2D) intrinsic ferromagnetic (FM) materials with high Curie temperatures (Tc), large perpendicular magnetic anisotropy (PMA), and large spin polarization are desirable for atomically thin spintronic devices. Herein, we propose a 2D intrinsic FM material Mn2GeI2 monolayer with thermodynamical stability and outstanding FM properties using first-principles calculations. Our calculations
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Impact of defect concentration on piezoelectricity in Mn/Fe-doped KTN crystals Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-09 Xiaolin Huang, Yu Wang, Bohan Xing, Xinyu Jin, Mingxuan Liu, Jinyu Ruan, Xing Wen, Peng Tan, Hao Tian
Defect engineering via doping exhibits considerable potential for improving the performance of environment-friendly lead-free piezoelectric materials. Owing to the susceptibility to lattice vibrations and the micro-local chemical environment, the readily available Mn/Fe transition metal elements (TMEs) facilitate the construction of defect structures. However, the role of TMEs in shaping the domain
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Spin-wave self-imaging: Experimental and numerical demonstration of caustic and Talbot-like diffraction patterns Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-09 Uladzislau Makartsou, Mateusz Gołębiewski, Urszula Guzowska, Alexander Stognij, Ryszard Gieniusz, Maciej Krawczyk
Extending the scope of the self-imaging phenomenon, traditionally associated with linear optics, to the domain of magnonics, this study presents the experimental demonstration and numerical analysis of spin-wave (SW) self-imaging in an in-plane magnetized yttrium iron garnet film. We explore this phenomenon using a setup in which a plane SW passes through a diffraction grating, and the resulting interference
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Distinct differences in surface transport between electrolyte-gated (110) and (001) SrTiO3 Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-09 P. Z. Chen, J. H. Zhang, G. Z. Zhou, W. J. Zhai, L. Lin, Z. B. Yan, C. Chen, X. P. Jiang, C. L. Lu, J.-M. Liu
Electrolyte gating technology has been widely used as an effective tool to study novel physics at complex oxide surfaces and interfaces. Certain emergent phenomena reported in electro-gated SrTiO3 (STO) surfaces are particularly interesting. Here, we report on the disparate electron transport behaviors of electrolyte-gated STO (001) and (110) oriented surfaces. In contrast to the anomalous transport
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On-state electrical stress-induced degradation of NiO/β-Ga2O3 heterojunction pn diodes Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-09 Yingzhe Wang, Xuefeng Zheng, Jiaduo Zhu, Ailing Pan, Sijie Bu, Yuehua Hong, Jincheng Zhang, Lixin Guo, Xiaohua Ma, Yue Hao
Degradation and trap evolution in NiO/β-Ga2O3 heterojunction pn diodes under on-state electrical stress were investigated in this work using deep-level transient spectroscopy measurements and density functional theory (DFT) calculations. The decrease in turn-on voltage and forward current appears to correlate with an increase in the concentration of the compensating acceptor-like traps. From the energy
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Non-destructive characterization of silicon nanowires and nanowire coatings using mid-infrared spectroscopy Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-09 S. Maryam Vaghefi Esfidani, Daniel W. Keefe, Fatima Toor, Thomas G. Folland
Silicon nanowires (SiNWs) have attracted much attention owing to their potential applications in electronics and photonics, while remaining as a cost-effective material platform. Key material properties in engineering SiNWs for different applications include their length, density, and presence of oxides or other chemicals on the surface. However, monitoring these properties is challenging, as scanning
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Low-donor content approach to achieve sensitive narrowband organic photodetectors Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-08 Tianyi Zhang, Jonas Schröder, Jakob Wolansky, Karl Leo, Johannes Benduhn
Narrowband near-infrared (NIR) detectors are key components for various modern biomedical, agricultural, astronomical sensing as well as monitoring applications. Typically, a narrowband organic photodetector (OPD) requires thick junctions or additional optical elements, which are either tedious or cost-ineffective. Here, we adopt the low-donor content strategy in our thin-film device to realize narrowband
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Epitaxial trench refill of 4H-SiC by chlorinated chemistry Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-08 Gerard Colston, Kelly Turner, Arne Renz, Peter Gammon, Marina Antoniou, Philip A. Mawby, Vishal A. Shah
Trench epitaxy of 4H-SiC is investigated with the supersaturation of chlorinated chemistry at a growth temperature of 1550 °C. Coupled with a lower growth temperature than has been previously reported, the integrity of the 4H-SiC trenches is retained and minimal rounding effects of H2 annealing prior to growth are observed. The system gives different growth rates of materials on the various crystal
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Sorting of enantiomers using optical chirality in uniform light field Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-08 Jun Yao, Yihua Bai, Yi-Dong Liu, Jian Wang, Yuanjie Yang
Enantiomer sorting greatly promotes the advancement of chemistry, bioscience, and medicine while also facing significant challenges. Recently, all-optical solutions have attracted considerable interest due to their non-invasiveness. While, it should be noted that the achiral optical force is always much larger than the chiral gradient force that plays a key role in all-optical enantiomer sorting, hindering
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Frequency-doubling perfect negative reflection in phase gradient metasurfaces Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-08 Yue Gao, Jiaqi Quan, Baoyin Sun, Lin Xu, Yangyang Fu, Huanyang Chen, Yadong Xu
Phase gradient metasurfaces (PGMs) have demonstrated powerful capacities for manipulating light waves freely. However, PGMs have limitations of bulky size and narrow bandwidth that hinder further applications. In this work, we present the design and analysis of a reflection-type PGM by utilizing the phase choice freedom in the supercell. It is found that in this well-designed PGM, perfect negative
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Magnetization switching driven by spin current in a T-type ferromagnetic trilayer Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-08 Shiqiang Liu, Caihua Wan, Jiafeng Feng, Xuming Luo, Ran Zhang, Zhimba Zh. Namsaraev, Xiaohan Li, Fangshuo Gao, Maksim E. Stebliy, Alexey V. Ognev, Guoqiang Yu, Alexander S. Samardak, Xiufeng Han
The T-type CoFeB/spacer/CoFeB structure is a promising candidate for the development of perpendicular spin–orbit torque (SOT) magnetic random-access memory and other SOT devices. It consists of an in-plane magnetized layer, a perpendicularly magnetized layer, and a non-magnetic metal spacer that induces interlayer exchange coupling. By engineering the W spacer, this system achieves field-free SOT switching
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Wide-range thermal conductivity modulation based on protonated nickelate perovskite oxides Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-08 Hao-Bo Li, Zhiping Bian, Mitsuki Yoshimura, Kohei Shimoyama, Chengchao Zhong, Keiji Shimoda, Azusa N. Hattori, Kunihiko Yamauchi, Ikutaro Hamada, Hiromichi Ohta, Hidekazu Tanaka
The perovskite oxides ReNiO3 (Re = rare-earth elements) are promising functional materials due to their strongly correlated electrons. Except for the well-known intrinsic metal-insulating transition in these materials, recent progresses have proved that protonation of ReNiO3 can bring about interesting Mott transition in this series. To date, in these protonated species (H-ReNiO3), huge resistance
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Molecular beam epitaxy and characterization of ferroelectric quaternary alloy Sc0.2Al0.45Ga0.35N Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-08 Samuel Yang, Ding Wang, Md Mehedi Hasan Tanim, Danhao Wang, Zetian Mi
In this study, we demonstrate ferroelectricity in high-quality monocrystalline quaternary alloy ScAlGaN. Sc0.2Al0.45Ga0.35N films are grown by plasma-assisted molecular beam epitaxy and exhibit a surface roughness of 0.5 nm, limited by the roughness of the underlying molybdenum template. Polarization-electric field and positive-up-negative-down measurements reveal unambiguous ferroelectric switching
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Polarization-controlled unidirectional lattice plasmon modes via a multipolar plasmonic metasurface Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-05-07 Seyedehniousha Mousavi, Muhammad Abdullah Butt, Zeinab Jafari, Orad Reshef, Robert W. Boyd, Peter Banzer, Israel De Leon
Diffractive plasmonic metasurfaces offer the possibility of controlling the flow of light in flat optical systems through the excitation of lattice plasmon modes by a careful metasurface design. Nonetheless, a remaining challenge for this type of structure is the dynamic control of its optical properties via degrees of freedom, such as the polarization states of incoming light. In this report, we explain